Infineon IPDQ60R010S7 Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP IPDQ60R010S7XTMA1
- RS 제품 번호:
- 225-0580
- 제조사 부품 번호:
- IPDQ60R010S7XTMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩30,512.40
일시적 품절
- 2026년 5월 04일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩30,512.40 |
| 10 - 99 | ₩29,591.20 |
| 100 - 249 | ₩28,707.60 |
| 250 - 499 | ₩27,861.60 |
| 500 + | ₩27,015.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 225-0580
- 제조사 부품 번호:
- IPDQ60R010S7XTMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPDQ60R010S7 | |
| Package Type | HDSOP | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 694W | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.06mm | |
| Width | 2.35 mm | |
| Standards/Approvals | No | |
| Length | 15.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPDQ60R010S7 | ||
Package Type HDSOP | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 694W | ||
Maximum Operating Temperature 150°C | ||
Height 21.06mm | ||
Width 2.35 mm | ||
Standards/Approvals No | ||
Length 15.1mm | ||
Automotive Standard No | ||
The Infineon IPDQ60R010S7 is the N channel power MOSFET and it enables the best performance for low frequency switching applications. The MOSFET is optimized for static switching and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for liner rectification inSMPS and inverter topologies.
Minimizes conduction losses
Increases energy efficiency
More compact and easier designs
Eliminates or reduces heat sinks in solid-state design
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