제조사부품번호

Infineon IPD Type N-Channel MOSFET, 207 A, 600 V N HDSOP IPDQ60R040S7XTMA1

RS 제품 번호:: 260-1202
제조사 부품 번호:: IPDQ60R040S7XTMA1
제조업체:: Infineon

Infineon IPD Type N-Channel MOSFET, 207 A, 600 V N HDSOP IPDQ60R040S7XTMA1

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Subtotal (1 unit)*

₩8,948.80

재고있음

750 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩8,948.80
10 - 99	₩8,497.60
100 - 249	₩8,084.00
250 - 499	₩7,670.40
500 +	₩7,294.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 260-1202
제조사 부품 번호:: IPDQ60R040S7XTMA1
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	207A
	Maximum Drain Source Voltage Vds	600V
	Series	IPD
	Package Type	HDSOP
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.82V
	Typical Gate Charge Qg @ Vgs	83nC
	Maximum Power Dissipation Pd	272W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	15.1mm
	Height	2.35mm
	Width	15.5 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 207A
	Maximum Drain Source Voltage Vds 600V
	Series IPD
	Package Type HDSOP
	Mount Type Surface
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.82V
	Typical Gate Charge Qg @ Vgs 83nC
	Maximum Power Dissipation Pd 272W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 15.1mm
	Height 2.35mm
	Width 15.5 mm
	Automotive Standard No

Datasheet - IPDQ60R040S7XTMA1

The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.

High pulse current capability

Increased system performance

More compact and easier design

Lower BOM or/and TCO over prolonged life time

Shock & vibration resistance

Infineon IPD Type N-Channel MOSFET, 207 A, 600 V N HDSOP IPDQ60R040S7XTMA1

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