Infineon IPD N-Channel MOSFET, 207 A, 600 V N HDSOP IPDQ60R040S7XTMA1
- RS 제품 번호:
- 260-1202
- 제조사 부품 번호:
- IPDQ60R040S7XTMA1
- 제조업체:
- Infineon
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- RS 제품 번호:
- 260-1202
- 제조사 부품 번호:
- IPDQ60R040S7XTMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 207A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HDSOP | |
| Series | IPD | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Maximum Power Dissipation Pd | 272W | |
| Forward Voltage Vf | 820mV | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.35mm | |
| Length | 15.1mm | |
| Standards/Approvals | RoHS | |
| Width | 15.5mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 207A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HDSOP | ||
Series IPD | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Maximum Power Dissipation Pd 272W | ||
Forward Voltage Vf 820mV | ||
Maximum Operating Temperature 150°C | ||
Height 2.35mm | ||
Length 15.1mm | ||
Standards/Approvals RoHS | ||
Width 15.5mm | ||
Automotive Standard No | ||
The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
High pulse current capability
Increased system performance
More compact and easier design
Lower BOM or/and TCO over prolonged life time
Shock & vibration resistance
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