Infineon IPD Type N-Channel MOSFET, 375 A, 600 V N HDSOP IPDQ60R022S7XTMA1
- RS 제품 번호:
- 260-1200
- 제조사 부품 번호:
- IPDQ60R022S7XTMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩15,021.20
재고있음
- 750 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩15,021.20 |
| 10 - 99 | ₩14,269.20 |
| 100 - 249 | ₩13,554.80 |
| 250 - 499 | ₩12,896.80 |
| 500 + | ₩12,238.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 260-1200
- 제조사 부품 번호:
- IPDQ60R022S7XTMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 375A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD | |
| Package Type | HDSOP | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Power Dissipation Pd | 416W | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 375A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD | ||
Package Type HDSOP | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Power Dissipation Pd 416W | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
High pulse current capability
Increased system performance
More compact and easier design
Lower BOM or/and TCO over prolonged life time
Shock & vibration resistance
관련된 링크들
- Infineon IPD Type N-Channel MOSFET, 375 A, 600 V N HDSOP
- Infineon IPD Type N-Channel MOSFET, 90 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T022S7XTMA1
- Infineon IPD Type N-Channel MOSFET, 207 A, 600 V N HDSOP IPDQ60R040S7XTMA1
- Infineon IPD Type N-Channel MOSFET, 126 A, 600 V N HDSOP IPDQ60R065S7XTMA1
- Infineon IPD Type N-Channel MOSFET, 207 A, 600 V N HDSOP
- Infineon IPD Type N-Channel MOSFET, 126 A, 600 V N HDSOP
- Infineon IPD Type N-Channel MOSFET, 288 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R007CM8XTMA1
- Infineon IPD Type N-Channel MOSFET, 113.3 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T017S7XTMA1