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Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7XTMA1

RS 제품 번호:: 351-942
제조사 부품 번호:: IPDQ60T010S7XTMA1
제조업체:: Infineon

Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7XTMA1

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Subtotal (1 unit)*

₩52,352.36

재고있음

750 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩52,352.36
10 - 99	₩47,127.84
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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-942
제조사 부품 번호:: IPDQ60T010S7XTMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	174A
	Maximum Drain Source Voltage Vds	600V
	Series	IPDQ60
	Package Type	PG-HDSOP-22
	Mount Type	Surface
	Pin Count	22
	Maximum Drain Source Resistance Rds	0.022Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	318nC
	Maximum Power Dissipation Pd	694W
	Forward Voltage Vf	0.82V
	Maximum Operating Temperature	150°C
	Length	15.1mm
	Width	15.5 mm
	Height	2.35mm
	Standards/Approvals	JEDEC
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 174A
	Maximum Drain Source Voltage Vds 600V
	Series IPDQ60
	Package Type PG-HDSOP-22
	Mount Type Surface
	Pin Count 22
	Maximum Drain Source Resistance Rds 0.022Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 318nC
	Maximum Power Dissipation Pd 694W
	Forward Voltage Vf 0.82V
	Maximum Operating Temperature 150°C
	Length 15.1mm
	Width 15.5 mm
	Height 2.35mm
	Standards/Approvals JEDEC
	Automotive Standard No

Datasheet - IPDQ60T010S7XTMA1

COO (Country of Origin):: MY

The Infineon CoolMOS S7T with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS.

Minimized conduction losses

Increased system performances

Allow more compact design over EMR

Lower TCO over prolonged time

Enabling higher power density designs

Reduction of external sensing elements

Best utilization of power transistor

Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7XTMA1

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