Infineon IPDQ60R010S7A Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP
- RS 제품 번호:
- 225-0577
- 제조사 부품 번호:
- IPDQ60R010S7AXTMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 750 units)*
₩17,290,830.00
일시적 품절
- 2026년 5월 27일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 750 - 3000 | ₩23,054.44 | ₩17,290,266.00 |
| 3750 + | ₩22,362.60 | ₩16,771,527.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 225-0577
- 제조사 부품 번호:
- IPDQ60R010S7AXTMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPDQ60R010S7A | |
| Package Type | HDSOP | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 694W | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.06mm | |
| Length | 15.1mm | |
| Standards/Approvals | No | |
| Width | 2.35 mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPDQ60R010S7A | ||
Package Type HDSOP | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 694W | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 21.06mm | ||
Length 15.1mm | ||
Standards/Approvals No | ||
Width 2.35 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon IPDQ60R010S7A is a high voltage power MOSFET,designed as static switch according to the super junction (SJ) principle. The mosfet combines the experience of the leading SJ MOSFET supplier with high class innovation enabling low RDS (on) in QDPAK package. The S7A series is optimised for low frequency switching and high current. application like circuit breakers.
Minimizes conduction losses
Increases energy efficiency
More compact and easier designs
Lower TCO cost or BOM cost
관련된 링크들
- Infineon IPDQ60R010S7A Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP IPDQ60R010S7AXTMA1
- Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7AXTMA1
- Infineon IPDQ60R010S7 Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP IPDQ60R010S7XTMA1
- Infineon IPDQ60R010S7 Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP
- Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7XTMA1
- Infineon IPD Type N-Channel MOSFET, 54 A, 60 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T040S7AXTMA1
- Infineon IPD Type N-Channel MOSFET, 90 A, 60 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T022S7AXTMA1
- Infineon IPD Type N-Channel MOSFET, 113 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T017S7AXTMA1
