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Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7AXTMA1

RS 제품 번호:: 351-944
제조사 부품 번호:: IPDQ60T010S7AXTMA1
제조업체:: Infineon

Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7AXTMA1

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Subtotal (1 unit)*

₩54,433.52

재고있음

750 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩54,433.52
10 - 99	₩49,000.32
100 +	₩45,170.76

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-944
제조사 부품 번호:: IPDQ60T010S7AXTMA1
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	174A
	Maximum Drain Source Voltage Vds	600V
	Series	IPDQ60
	Package Type	PG-HDSOP-22
	Mount Type	Surface
	Pin Count	22
	Maximum Drain Source Resistance Rds	10mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	318nC
	Maximum Power Dissipation Pd	694W
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	0.82V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	AEC Q101
	Height	2.35mm
	Width	15.5 mm
	Length	15.1mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 174A
	Maximum Drain Source Voltage Vds 600V
	Series IPDQ60
	Package Type PG-HDSOP-22
	Mount Type Surface
	Pin Count 22
	Maximum Drain Source Resistance Rds 10mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 318nC
	Maximum Power Dissipation Pd 694W
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 0.82V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals AEC Q101
	Height 2.35mm
	Width 15.5 mm
	Length 15.1mm
	Automotive Standard AEC-Q101

Datasheet - IPDQ60T010S7AXTMA1

COO (Country of Origin):: MY

The Infineon CoolMOS S7TA with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation and functional safety. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, Battery Disconnect, and eFuses.

Minimized conduction losses

Increased system performances

Allowing more compact design over EMR

Lower TCO over prolonged time

Enabling higher power density designs

Reduction of external sensing elements

Best utilization of power transistor

Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7AXTMA1

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