Infineon IPDQ60R010S7 Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP
- RS 제품 번호:
- 225-0579
- 제조사 부품 번호:
- IPDQ60R010S7XTMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 750 units)*
₩16,628,130.00
일시적 품절
- 2026년 5월 04일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 750 - 3000 | ₩22,170.84 | ₩16,627,848.00 |
| 3750 + | ₩21,727.16 | ₩16,295,370.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 225-0579
- 제조사 부품 번호:
- IPDQ60R010S7XTMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HDSOP | |
| Series | IPDQ60R010S7 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Maximum Power Dissipation Pd | 694W | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.1mm | |
| Standards/Approvals | No | |
| Width | 2.35 mm | |
| Height | 21.06mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HDSOP | ||
Series IPDQ60R010S7 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Maximum Power Dissipation Pd 694W | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 15.1mm | ||
Standards/Approvals No | ||
Width 2.35 mm | ||
Height 21.06mm | ||
Automotive Standard No | ||
The Infineon IPDQ60R010S7 is the N channel power MOSFET and it enables the best performance for low frequency switching applications. The MOSFET is optimized for static switching and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for liner rectification inSMPS and inverter topologies.
Minimizes conduction losses
Increases energy efficiency
More compact and easier designs
Eliminates or reduces heat sinks in solid-state design
관련된 링크들
- Infineon IPDQ60R010S7 Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP IPDQ60R010S7XTMA1
- Infineon IPDQ60R010S7A Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP IPDQ60R010S7AXTMA1
- Infineon IPDQ60R010S7A Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP
- Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7XTMA1
- Infineon IPD Type N-Channel MOSFET, 207 A, 600 V N HDSOP IPDQ60R040S7XTMA1
- Infineon IPD Type N-Channel MOSFET, 126 A, 600 V N HDSOP IPDQ60R065S7XTMA1
- Infineon IPD Type N-Channel MOSFET, 375 A, 600 V N HDSOP IPDQ60R022S7XTMA1
- Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7AXTMA1
