Infineon IPT N-Channel MOSFET, 454 A, 60 V, 8-Pin HSOF-8 IPT008N06NM5LFATMA1

RS 제품 번호:: 236-1585
제조사 부품 번호:: IPT008N06NM5LFATMA1
제조업체:: Infineon

Infineon IPT N-Channel MOSFET, 454 A, 60 V, 8-Pin HSOF-8 IPT008N06NM5LFATMA1

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₩12,580.00

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2026년 12월 24일 부터 배송

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RS 제품 번호:: 236-1585
제조사 부품 번호:: IPT008N06NM5LFATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	454A
	Maximum Drain Source Voltage Vds	60V
	Series	IPT
	Package Type	HSOF-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.8mΩ
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	185nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	278W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	2.4mm
	Width	10.58mm
	Length	10.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 454A
	Maximum Drain Source Voltage Vds 60V
	Series IPT
	Package Type HSOF-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.8mΩ
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 185nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 278W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 2.4mm
	Width 10.58mm
	Length 10.1mm
	Automotive Standard No

Datasheet - IPT008N06NM5LFATMA1

Infineon IPT Series MOSFET, 60V Maximum Drain Source Voltage, 454A Maximum Continuous Drain Current - IPT008N06NM5LFATMA1

This MOSFET is a high-current switching transistor designed for surface-mounted power applications, offering robust thermal tolerance and substantial current capability for demanding circuits. It operates across a wide ambient range and is suited to systems requiring low conduction loss and significant power handling within a Compact package.

Features and Benefits:

• 60 V maximum drain voltage delivers high-voltage switching capability
• 454 A continuous drain current supports heavy current loads
• 0.8 mΩ maximum RDS(on) reduces conduction losses in power paths
• 278 W maximum power dissipation allows sustained high-power operation
• 185 nC typical gate charge enables predictable switching control
• ±20 V gate-source rating permits broad gate drive margins

Applications

• Suitable for high-current motor-drive stages
• Can be used for DC-DC converter output switches
• Ideal for power distribution in server power supplies
• Used with battery-management modules handling large currents
• Suitable for industrial inverter switching stages

What thermal endurance can be expected in harsh environments?

It is rated to operate from −55 °C up to 150 °C, allowing use in wide temperature conditions.

How does the package influence mounting and layout?

The HSOF-8 surface-mount package facilitates Compact PCB placement and low-inductance connections for power traces.

What gate-drive considerations are necessary for switching?

Design gate drivers to supply sufficient charge for the 185 nC gate to achieve required switching speeds while respecting the ±20 V gate-source limit.

How should designers manage power dissipation in high-load scenarios?

Ensure PCB copper area and thermal vias are sized to handle the 278 W dissipation and maintain junction temperatures within limits.

What conduction performance can be expected during continuous operation?

Expect low on-state voltage drop due to the 0.8 mΩ maximum drain-source resistance, benefiting efficiency in continuous high-current conditions.