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Infineon IPT Type N-Channel Power Transistor, 137 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1

RS 제품 번호:: 349-130
제조사 부품 번호:: IPT067N20NM6ATMA1
제조업체:: Infineon

Infineon IPT Type N-Channel Power Transistor, 137 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1

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Subtotal (1 unit)*

₩16,560.00

1,960 개 단위 배송 준비 완료

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RS 제품 번호:: 349-130
제조사 부품 번호:: IPT067N20NM6ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	Power Transistor
	Channel Type	Type N
	Maximum Continuous Drain Current Id	137A
	Maximum Drain Source Voltage Vds	200V
	Package Type	PG-HSOF-8
	Series	IPT
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.7mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	71nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	300W
	Maximum Operating Temperature	175°C
	Standards/Approvals	J-STD-020, IEC61249-2-21, 100% Avalanche Tested, RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type Power Transistor
	Channel Type Type N
	Maximum Continuous Drain Current Id 137A
	Maximum Drain Source Voltage Vds 200V
	Package Type PG-HSOF-8
	Series IPT
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.7mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 71nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 300W
	Maximum Operating Temperature 175°C
	Standards/Approvals J-STD-020, IEC61249-2-21, 100% Avalanche Tested, RoHS
	Automotive Standard No

Datasheet - IPT067N20NM6ATMA1

COO (Country of Origin):: MY

Infineon IPT Series Power Transistor, 200V Maximum Drain Source Voltage, 137A Maximum Continuous Drain Current - IPT067N20NM6ATMA1

This power transistor is a high-current N-channel enhancement device intended for demanding switching applications. Designed for surface-mount assembly in a PG-HSOF-8 package, it handles substantial power and operates across an extended temperature range suited to harsh environments. The device meets industry reliability assessments and environmental restrictions to support robust electronic designs.

Features and Benefits:

• 200V rating enables high-voltage switching capability
• 6.7mΩ low Rds(on) reduces conduction losses
• 137A continuous drain current supports heavy loads
• 300W power dissipation manages significant thermal stress
• 71nC typical gate charge delivers predictable switching energy
• 20V gate tolerance permits broad gate-drive choices

Applications

• Suitable for high-power DC-DC converter stages
• Ideal for motor drive and inverter power legs
• Used with synchronous rectification in power supplies
• Can be used for hard-switching topologies in converters
• Appropriate for industrial battery-management systems

What temperature extremes can this device endure in operation?

It operates across a wide range from -55°C up to 175°C, allowing use in environments with high thermal stress.

How is avalanche behaviour assessed for reliability?

Each unit undergoes 100% avalanche testing to verify robustness against transient inductive energy absorption.

Which environmental and packaging standards does it satisfy?

The device complies with J-STD-020 and IEC 61249-2-21 and conforms to RoHS restrictions for material composition.

What mounting and pin configuration should designers expect?

It is supplied in an eight-pin PG-HSOF-8 surface-mount package suitable for automated PCB assembly.