Infineon IPT Type N-Channel Power Transistor, 137 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩15,113.32

Add to Basket
수량 선택 또는 입력
재고있음
  • 1,960 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
1 - 9₩15,113.32
10 - 99₩13,592.40
100 - 499₩12,552.76
500 - 999₩11,635.32
1000 +₩10,428.36

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-130
제조사 부품 번호:
IPT067N20NM6ATMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

200V

Series

IPT

Package Type

PG-HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Typical Gate Charge Qg @ Vgs

71nC

Maximum Operating Temperature

175°C

Standards/Approvals

J-STD-020, IEC61249-2-21, 100% Avalanche Tested, RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), minimizing conduction losses. The excellent gate charge x RDS(on) product (FOM) ensures superior switching performance, while the very low reverse recovery charge (Qrr) contributes to efficient operation. With a high avalanche energy rating, it offers enhanced robustness, and it is capable of operating at 175°C, making it reliable even in harsh environments.

Pb free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

관련된 링크들