Infineon IPT Type N-Channel Power Transistor, 297 A, 135 V Enhancement, 8-Pin PG-HSOF-8 IPT020N13NM6ATMA1

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Subtotal (1 pack of 2 units)*

₩19,691.12

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한팩당*
2 - 18₩9,845.56₩19,691.12
20 - 198₩8,867.96₩17,735.92
200 - 998₩8,170.48₩16,340.96
1000 - 1998₩7,587.68₩15,175.36
2000 +₩6,796.20₩13,592.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-120
제조사 부품 번호:
IPT020N13NM6ATMA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

297A

Maximum Drain Source Voltage Vds

135V

Series

IPT

Package Type

PG-HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

39W

Typical Gate Charge Qg @ Vgs

159nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, J-STD-020, RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for efficient power switching applications. It offers very low on-resistance (RDS(on)), reducing conduction losses and improving overall performance. With an excellent gate charge x RDS(on) product (FOM), it ensures superior switching efficiency. The MOSFET also features very low reverse recovery charge (Qrr) for better efficiency during switching events.

Optimized for motor drives and battery powered applications

Pb free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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