Infineon IPT010N08NM5 N-Channel MOSFET, 43 A, 80 V, 8-Pin HSOF IPT010N08NM5ATMA1
- RS 제품 번호:
- 225-0581
- 제조사 부품 번호:
- IPT010N08NM5ATMA1
- 제조업체:
- Infineon
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- RS 제품 번호:
- 225-0581
- 제조사 부품 번호:
- IPT010N08NM5ATMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | IPT010N08NM5 | |
| Package Type | HSOF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Width | 10.58mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series IPT010N08NM5 | ||
Package Type HSOF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Length 10.1mm | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Width 10.58mm | ||
Automotive Standard No | ||
Infineon IPT010N08NM5 Series MOSFET, 80V Drain Source Voltage, 43A Continuous Drain Current - IPT010N08NM5ATMA1
This MOSFET is a semiconductor switching device designed for high-current, high-voltage applications in surface-mounted assemblies. It operates across a wide temperature span and is intended for power conversion, switching and drive circuits that require robust drain-source performance and substantial power handling.
Features and Benefits:
• Low on-resistance delivers reduced conduction losses at high currents
• High drain-source voltage enables operation at 80 V system rails
• High continuous drain current allows sustained 43 A load handling
• High power dissipation supports up to 375 W thermal loading
• Typical gate charge of 178 nC permits predictable switching energetics
• High drain-source voltage enables operation at 80 V system rails
• High continuous drain current allows sustained 43 A load handling
• High power dissipation supports up to 375 W thermal loading
• Typical gate charge of 178 nC permits predictable switching energetics
Applications
• Suitable for DC-DC converter switching stages
• Ideal for motor-drive half-bridge configurations
• Used with power supplies requiring high current handling
• Can be used for synchronous rectification in converters
• Ideal for motor-drive half-bridge configurations
• Used with power supplies requiring high current handling
• Can be used for synchronous rectification in converters
What gate voltage limits must be observed during circuit design?
The gate must not be driven beyond a maximum of 20 V to avoid gate-source overstress.
What thermal environment range can it withstand in operation?
It is specified to function from −55 °C up to 175 °C enabling use across extreme temperature conditions.
How many pins are available for PCB routing and connections?
There are eight pins for layout and electrical connection in the surface-mount footprint.
What package type should be accounted for when designing the PCB footprint?
The component uses an HSOF package intended for surface mounting and board attachment.
What is the typical conduction resistance to consider for efficiency calculations?
Expect a maximum drain-source resistance of around 1.05 mΩ for loss estimations.
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