Infineon IPT Type N-Channel MOSFET, 87 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT129N20NM6ATMA1

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10 - 99₩12,011.32
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RS 제품 번호:
349-132
제조사 부품 번호:
IPT129N20NM6ATMA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

87A

Maximum Drain Source Voltage Vds

200V

Series

IPT

Package Type

PG-HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

12.9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

37nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

234W

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, JEDEC, J-STD-020, RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), minimizing conduction losses. The excellent gate charge x RDS(on) product (FOM) ensures superior switching performance, while the very low reverse recovery charge (Qrr) contributes to efficient operation. With a high avalanche energy rating, it offers enhanced robustness, and it is capable of operating at 175°C, making it reliable even in harsh environments.

Pb free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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