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Infineon IPT0 Type N-Channel MOSFET, 321 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1

RS 제품 번호:: 351-906
제조사 부품 번호:: IPT017N10NM5LF2ATMA1
제조업체:: Infineon

Infineon IPT0 Type N-Channel MOSFET, 321 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1

대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩21,108.64

재고있음

1,990 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 18	₩10,554.32	₩21,106.76
20 - 198	₩9,501.52	₩19,004.92
200 +	₩8,764.56	₩17,527.24

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-906
제조사 부품 번호:: IPT017N10NM5LF2ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	321A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PG-HSOF-8
	Series	IPT0
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	165nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	375W
	Maximum Operating Temperature	175°C
	Length	10.58mm
	Width	10.1 mm
	Standards/Approvals	Halogen-Free (IEC61249-2-21), RoHS, JEDEC
	Height	1.30mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 321A
	Maximum Drain Source Voltage Vds 100V
	Package Type PG-HSOF-8
	Series IPT0
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 165nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 375W
	Maximum Operating Temperature 175°C
	Length 10.58mm
	Width 10.1 mm
	Standards/Approvals Halogen-Free (IEC61249-2-21), RoHS, JEDEC
	Height 1.30mm
	Automotive Standard No

Datasheet - IPT017N10NM5LF2ATMA1

The Infineon Infineon’s best-in-class OptiMOS 5 Linear FET 2 100 V in TO-Leadless (TOLL), offering the industry’s lowest RDS(on) and wide SOA at 25˚C. The combination of the OptiMOS 5 Linear FET 2 technology and the TOLL package, It is designed to provide highest power density, for inrush current protection applications such as hot-swap, e-fuse, and within battery protection in Battery management systems (BMS).

Wide safe operating area (SOA)

Low RDS(on)

Lower IGSS compared to Linear FET

Optimized transfer characteristic

Infineon IPT0 Type N-Channel MOSFET, 321 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1

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