Infineon IPT0 Type N-Channel MOSFET, 321 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1

RS 제품 번호:: 351-906
제조사 부품 번호:: IPT017N10NM5LF2ATMA1
제조업체:: Infineon

Infineon IPT0 Type N-Channel MOSFET, 321 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1

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Subtotal (1 pack of 2 units)*

₩30,320.00

1,790 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 18	₩15,160.00	₩30,320.00
20 - 198	₩13,640.00	₩27,280.00
200 +	₩12,590.00	₩25,180.00

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RS 제품 번호:: 351-906
제조사 부품 번호:: IPT017N10NM5LF2ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	321A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PG-HSOF-8
	Series	IPT0
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	165nC
	Maximum Power Dissipation Pd	375W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	Halogen-Free (IEC61249-2-21), RoHS, JEDEC
	Length	10.58mm
	Height	1.30mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 321A
	Maximum Drain Source Voltage Vds 100V
	Package Type PG-HSOF-8
	Series IPT0
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 165nC
	Maximum Power Dissipation Pd 375W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals Halogen-Free (IEC61249-2-21), RoHS, JEDEC
	Length 10.58mm
	Height 1.30mm
	Automotive Standard No

Datasheet - IPT017N10NM5LF2ATMA1

Infineon IPT0 Series MOSFET, 100V Maximum Drain Source Voltage, 321A Maximum Continuous Drain Current - IPT017N10NM5LF2ATMA1

This MOSFET is a high-power N-channel transistor designed for demanding switching applications where high current capability and thermal endurance are required. It operates across a wide temperature range and is supplied in an 8-pin surface-mount package suitable for compact power modules. The device adheres to halogen-free and RoHS standards and is intended for systems needing robust conduction and switching performance without automotive certification.

Features and Benefits:

• 100V drain tolerance enables high-voltage switching
• 321A continuous drain current supports heavy-load operation
• 1.7mΩ low Rds(on) reduces conduction losses
• 375W power dissipation allows high thermal throughput
• 165nC gate charge supports controlled switching transitions
• 1.2V forward voltage minimises diode conduction losses

Applications

• Suitable for high-power DC-DC converters and inverters
• Ideal for industrial motor drive switching stages
• Used with power modules requiring surface-mounted MOSFETs
• Can be used for server and telecoms power distribution
• Appropriate for energy conversion in renewable power systems

What package characteristics affect thermal handling on board?

The device is supplied in a PG-HSOF-8 surface-mount package which permits low-inductance layout and improved heat transfer when soldered to a large copper area or dedicated heatsink planes.

How does gate voltage rating influence gate drive design?

With a maximum gate-source rating of 20V, gate drivers should be selected to remain within this limit while providing sufficient drive to achieve low on-resistance during conduction.

What environmental temperature range can it withstand during operation?

The component is specified to operate down to -55°C and up to 175°C, allowing use in systems exposed to extreme ambient or elevated junction temperatures.

Are there any limitations regarding automotive use?

The device is not classified to automotive standards, so it should not be specified where automotive-grade approvals are mandatory.