STMicroelectronics SCTWA70N120G2V-4 N-Channel MOSFET, 91 A, 1.2 kV Enhancement, 4-Pin Hip-247 SCTWA70N120G2V-4
- RS 제품 번호:
- 233-0474
- 제조사 부품 번호:
- SCTWA70N120G2V-4
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 30 units)*
₩3,075,660.00
마지막 RS 재고
- 최종적인 330 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 120 | ₩102,522.00 | ₩3,075,642.00 |
| 150 + | ₩100,472.00 | ₩3,014,142.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 233-0474
- 제조사 부품 번호:
- SCTWA70N120G2V-4
- 제조업체:
- STMicroelectronics
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Hip-247 | |
| Series | SCTWA70N120G2V-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 547W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Forward Voltage Vf | 2.7V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 200°C | |
| Height | 5mm | |
| Length | 34.8mm | |
| Width | 15.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Hip-247 | ||
Series SCTWA70N120G2V-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 547W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Forward Voltage Vf 2.7V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 200°C | ||
Height 5mm | ||
Length 34.8mm | ||
Width 15.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency
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