STMicroelectronics SCTWA40N120G2V-4 N-Channel MOSFET, 45 A, 1.2 kV, 3-Pin Hip-247 SCTWA40N120G2V-4
- RS 제품 번호:
- 212-2094
- 제조사 부품 번호:
- SCTWA40N120G2V-4
- 제조업체:
- STMicroelectronics
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- RS 제품 번호:
- 212-2094
- 제조사 부품 번호:
- SCTWA40N120G2V-4
- 제조업체:
- STMicroelectronics
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Hip-247 | |
| Series | SCTWA40N120G2V-4 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.3V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 277W | |
| Maximum Operating Temperature | 200°C | |
| Width | 21.1mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Hip-247 | ||
Series SCTWA40N120G2V-4 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.3V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 277W | ||
Maximum Operating Temperature 200°C | ||
Width 21.1mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Height 5.1mm | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.
Very low switching losses
Low power losses at high temperatures
Higher operating temperature (up to 200 ˚C)
Body diode with no recovery losses
Easy to drive
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