STMicroelectronics SCTWA40N120G2V-4 Type N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip-247 SCTWA40N120G2V-4
- RS 제품 번호:
- 212-2094
- 제조사 부품 번호:
- SCTWA40N120G2V-4
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩28,500.80
마지막 RS 재고
- 최종적인 14 개 unit(s)이 배송 준비 됨
수량 | 한팩당 |
|---|---|
| 1 - 7 | ₩28,500.80 |
| 8 - 14 | ₩27,786.40 |
| 15 + | ₩27,335.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 212-2094
- 제조사 부품 번호:
- SCTWA40N120G2V-4
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCTWA40N120G2V-4 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.3V | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Power Dissipation Pd | 277W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 200°C | |
| Width | 21.1 mm | |
| Length | 15.9mm | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCTWA40N120G2V-4 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.3V | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Power Dissipation Pd 277W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 200°C | ||
Width 21.1 mm | ||
Length 15.9mm | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.
Very low switching losses
Low power losses at high temperatures
Higher operating temperature (up to 200 ˚C)
Body diode with no recovery losses
Easy to drive
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