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STMicroelectronics SCTWA40N12G24AG Type N-Channel MOSFET, 33 A, 1200 V Enhancement, 4-Pin Hip-247 SCTWA40N12G24AG

RS 제품 번호:: 214-972
제조사 부품 번호:: SCTWA40N12G24AG
제조업체:: STMicroelectronics

STMicroelectronics SCTWA40N12G24AG Type N-Channel MOSFET, 33 A, 1200 V Enhancement, 4-Pin Hip-247 SCTWA40N12G24AG

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Subtotal (1 tube of 30 units)*

₩884,859.60

재고있음

30 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
30 +	₩29,495.32	₩884,876.52

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 214-972
제조사 부품 번호:: SCTWA40N12G24AG
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	1200V
	Series	SCTWA40N12G24AG
	Package Type	Hip-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	105mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	290W
	Maximum Gate Source Voltage Vgs	22 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	3.4V
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Operating Temperature	200°C
	Standards/Approvals	AEC-Q101
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 1200V
	Series SCTWA40N12G24AG
	Package Type Hip-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 105mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 290W
	Maximum Gate Source Voltage Vgs 22 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 3.4V
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Operating Temperature 200°C
	Standards/Approvals AEC-Q101
	Automotive Standard AEC-Q101

Datasheet - SCTWA40N12G24AG

COO (Country of Origin):: CN

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

STMicroelectronics SCTWA40N12G24AG Type N-Channel MOSFET, 33 A, 1200 V Enhancement, 4-Pin Hip-247 SCTWA40N12G24AG

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