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STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin Hip-247 SCTWA70N120G2V-4

RS 제품 번호:: 233-0475
제조사 부품 번호:: SCTWA70N120G2V-4
제조업체:: STMicroelectronics

STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin Hip-247 SCTWA70N120G2V-4

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Subtotal (1 unit)*

₩73,827.60

재고있음

378 개 단위 배송 준비 완료

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수량	한팩당
1 - 4	₩73,827.60
5 - 9	₩72,361.20
10 - 14	₩70,199.20
15 - 19	₩68,789.20
20 +	₩68,131.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 233-0475
제조사 부품 번호:: SCTWA70N120G2V-4
제조업체:: STMicroelectronics

참조 문서

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	91A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	Hip-247
	Series	SCTWA70N120G2V-4
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	30mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Power Dissipation Pd	547W
	Typical Gate Charge Qg @ Vgs	150nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	2.7V
	Maximum Operating Temperature	200°C
	Standards/Approvals	No
	Height	5mm
	Length	34.8mm
	Width	15.6 mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 91A
	Maximum Drain Source Voltage Vds 1200V
	Package Type Hip-247
	Series SCTWA70N120G2V-4
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 30mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Power Dissipation Pd 547W
	Typical Gate Charge Qg @ Vgs 150nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 2.7V
	Maximum Operating Temperature 200°C
	Standards/Approvals No
	Height 5mm
	Length 34.8mm
	Width 15.6 mm
	Automotive Standard No

Datasheet - SCTWA70N120G2V-4

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Very high operating junction temperature capability (TJ = 200 °C)

Source sensing pin for increased efficiency

STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin Hip-247 SCTWA70N120G2V-4

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