STMicroelectronics SCTW70N N-Channel MOSFET, 91 A, 1.2 kV Enhancement, 3-Pin Hip-247 SCTW70N120G2V
- RS 제품 번호:
- 233-3023
- 제조사 부품 번호:
- SCTW70N120G2V
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 30 units)*
₩2,863,980.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 30 | ₩95,466.00 | ₩2,863,998.00 |
| 60 - 60 | ₩93,556.00 | ₩2,806,698.00 |
| 90 + | ₩90,750.00 | ₩2,722,482.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 233-3023
- 제조사 부품 번호:
- SCTW70N120G2V
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | SCTW70N | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 2.7V | |
| Maximum Power Dissipation Pd | 547W | |
| Maximum Operating Temperature | 200°C | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Width | 5.15mm | |
| Height | 20.15mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series SCTW70N | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 2.7V | ||
Maximum Power Dissipation Pd 547W | ||
Maximum Operating Temperature 200°C | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Width 5.15mm | ||
Height 20.15mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Sic material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
관련된 링크들
- STMicroelectronics SCTW70N N-Channel MOSFET, 91 A, 1.2 kV Enhancement, 3-Pin Hip-247 SCTW70N120G2V
- STMicroelectronics SCTW40N N-Channel MOSFET, 36 A, 1.2 kV Enhancement, 3-Pin Hip-247 SCTW40N120G2V
- STMicroelectronics SCT N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 3-Pin Hip-247 SCTW60N120G2
- STMicroelectronics SCTW N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 4-Pin Hip-247 SCTWA60N120G2-4
- STMicroelectronics SCTW35 N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCTW90 N-Channel MOSFET, 119 A, 650 V Enhancement, 3-Pin Hip-247 SCTW90N65G2V
- STMicroelectronics SCTW35 N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin Hip-247 SCTW35N65G2V
- STMicroelectronics SCTWA70N120G2V-4 N-Channel MOSFET, 91 A, 1.2 kV Enhancement, 4-Pin Hip-247 SCTWA70N120G2V-4