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STMicroelectronics SCTW70N Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 3-Pin Hip-247

RS 제품 번호:: 233-3023
제조사 부품 번호:: SCTW70N120G2V
제조업체:: STMicroelectronics

STMicroelectronics SCTW70N Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 3-Pin Hip-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩2,062,491.60

일시적 품절

2026년 8월 31일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩68,749.72	₩2,062,474.68
60 - 60	₩67,373.56	₩2,021,206.80
90 +	₩65,352.56	₩1,960,576.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 233-3023
제조사 부품 번호:: SCTW70N120G2V
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	91A
	Maximum Drain Source Voltage Vds	1200V
	Series	SCTW70N
	Package Type	Hip-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	21mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	2.7V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	28nC
	Maximum Power Dissipation Pd	547W
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Operating Temperature	200°C
	Length	15.75mm
	Standards/Approvals	No
	Width	5.15 mm
	Height	20.15mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 91A
	Maximum Drain Source Voltage Vds 1200V
	Series SCTW70N
	Package Type Hip-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 21mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 2.7V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 28nC
	Maximum Power Dissipation Pd 547W
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Operating Temperature 200°C
	Length 15.75mm
	Standards/Approvals No
	Width 5.15 mm
	Height 20.15mm
	Automotive Standard No

Datasheet - SCTW70N120G2V

The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Sic material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Very high operating junction temperature capability (TJ = 200 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitances

STMicroelectronics SCTW70N Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 3-Pin Hip-247

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