STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 4-Pin Hip-247 SCTWA35N65G2V-4
- RS 제품 번호:
- 233-0473
- 제조사 부품 번호:
- SCTWA35N65G2V-4
- 제조업체:
- STMicroelectronics
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Subtotal (1 unit)*
₩25,079.20
재고있음
- 241 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 4 | ₩25,079.20 |
| 5 - 9 | ₩24,590.40 |
| 10 - 14 | ₩23,857.20 |
| 15 - 19 | ₩23,387.20 |
| 20 + | ₩23,161.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 233-0473
- 제조사 부품 번호:
- SCTWA35N65G2V-4
- 제조업체:
- STMicroelectronics
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Hip-247 | |
| Series | SCTWA35N65G2V-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.3V | |
| Maximum Power Dissipation Pd | 240W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 200°C | |
| Width | 21.1 mm | |
| Height | 5.1mm | |
| Length | 20.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Hip-247 | ||
Series SCTWA35N65G2V-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.3V | ||
Maximum Power Dissipation Pd 240W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 200°C | ||
Width 21.1 mm | ||
Height 5.1mm | ||
Length 20.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency
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