STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247
- RS 제품 번호:
- 213-3943
- 제조사 부품 번호:
- SCTWA90N65G2V-4
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩1,515,298.80
일시적 품절
- 2026년 9월 28일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 30 | ₩50,509.96 | ₩1,515,315.72 |
| 60 - 90 | ₩48,994.68 | ₩1,469,857.32 |
| 120 + | ₩47,524.52 | ₩1,425,752.52 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 213-3943
- 제조사 부품 번호:
- SCTWA90N65G2V-4
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Hip-247 | |
| Series | SCTWA90N65G2V-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 2.5V | |
| Maximum Power Dissipation Pd | 656W | |
| Typical Gate Charge Qg @ Vgs | 157nC | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Width | 21.1 mm | |
| Length | 15.9mm | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Hip-247 | ||
Series SCTWA90N65G2V-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 2.5V | ||
Maximum Power Dissipation Pd 656W | ||
Typical Gate Charge Qg @ Vgs 157nC | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Width 21.1 mm | ||
Length 15.9mm | ||
Height 5.1mm | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
High speed switching performance
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
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