Infineon HEXFET Type N-Channel MOSFET, 4.1 A, 20 V Enhancement, 3-Pin SOT-23 IRLML6246TRPBF

RS 제품 번호:: 737-7221
Distrelec 제품 번호:: 304-45-317
제조사 부품 번호:: IRLML6246TRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 4.1 A, 20 V Enhancement, 3-Pin SOT-23 IRLML6246TRPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 20 units)*

₩8,080.00

520 개 단위 배송 준비 완료
추가로 2026년 8월 26일 부터 2,060 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
20 - 740	₩404.00	₩8,080.00
760 - 1480	₩392.00	₩7,860.00
1500 +	₩388.00	₩7,740.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 737-7221
Distrelec 제품 번호:: 304-45-317
제조사 부품 번호:: IRLML6246TRPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	66mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3.5nC
	Maximum Power Dissipation Pd	1.3W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 66mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3.5nC
	Maximum Power Dissipation Pd 1.3W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 20V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - IRLML6246TRPBF

This MOSFET is a compact N‑channel enhancement device designed for low-voltage switching in surface-mount assemblies. It operates across a wide temperature range and accepts gate-drive levels compatible with common control circuits. The package and electrical characteristics make it appropriate for space‑constrained boards requiring efficient switching performance without elevated power‑handling requirements.

Features and Benefits:

• Maximum drain-source voltage 20V enables low-voltage switching applications
• Continuous drain current 4.1A supports moderate load currents
• Low on‑resistance 66 mΩ minimises conduction losses
• Typical gate charge 3.5 nC allows faster switching transitions
• Maximum power dissipation 1.3W suits constrained thermal budgets
• Gate-source tolerance up to 12V permits robust drive margins

Applications

• Suitable for battery-management switching in portable systems
• Ideal for load switching in power-distribution modules
• Used with gate drivers in motor-control low-voltage stages
• Can be used for DC-DC converter synchronous switching
• Suitable for signal-level high-speed switching in control circuits

What thermal extremes can this device tolerate in operation?

It is specified to operate from -55 °C up to 150 °C, allowing use in environments with wide temperature fluctuations.

How does the package influence PCB layout and assembly?

The SOT‑23 surface‑mount format with three pins reduces board area and supports automated pick‑and‑place and reflow processes.

What is the expected behaviour under higher gate voltages?

The device limits gate‑source ratings to 12V maximum, so gate drives should remain within this threshold to prevent gate‑oxide stress.

How does the device perform under continuous load?

Continuous drain current is rated at 4.1A while thermal dissipation is constrained to 1.3 W, so adequate copper area or heatsinking is required to maintain safe junction temperatures.