Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 60 V Enhancement, 3-Pin SOT-23 IRLML0060TRPBF

RS 제품 번호:: 725-9341
제조사 부품 번호:: IRLML0060TRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 60 V Enhancement, 3-Pin SOT-23 IRLML0060TRPBF

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Subtotal (1 pack of 20 units)*

₩13,200.00

4,000 개 단위 배송 준비 완료
추가로 2026년 8월 26일 부터 68,720 개 단위 배송

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수량	한팩당	한팩당*
20 - 740	₩660.00	₩13,180.00
760 - 1480	₩642.00	₩12,840.00
1500 +	₩632.00	₩12,660.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 725-9341
제조사 부품 번호:: IRLML0060TRPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.7A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	92mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	2.5nC
	Maximum Power Dissipation Pd	1.25W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Height	1.02mm
	Length	3.04mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.7A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 92mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 2.5nC
	Maximum Power Dissipation Pd 1.25W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Height 1.02mm
	Length 3.04mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 2.7A Maximum Continuous Drain Current - IRLML0060TRPBF

This MOSFET is a compact N-channel enhancement device designed for low-voltage switching and power management in surface-mount applications. It operates across a wide temperature span suitable for demanding thermal environments and is intended for footprint-conscious circuit designs where efficient conduction and controlled gate drive are required.

Features and Benefits:

• Low on-resistance 92mΩ reduces conduction losses
• Handles continuous drain current 2.7A for moderate loads
• Rated drain-source voltage 60V for robust voltage headroom
• Typical gate charge 2.5nC enables fast, efficient switching
• Maximum power dissipation 1.25W limits thermal stress
• Gate-source tolerance 16V permits flexible drive voltages

Applications

• Suitable for DC-DC converters in compact electronics
• Ideal for high-side or low-side switching in controllers
• Used for load switching in battery-powered systems
• Can be used for motor-driver front end in small actuators
• Useful in power-path management on dense PCBs

What thermal extremes can it tolerate during operation?

It is specified to operate between -55°C and 150°C, allowing use in both cold-start and high-temperature environments without derating the electrical specification beyond standard guidelines.

How does the device behave under limited gate drive amplitude?

With a maximum gate-source rating of 16V and typical forward voltage around 1.3V, it can be driven from common logic-level drivers while maintaining controlled conduction characteristics.

What mounting considerations are necessary for effective cooling?

As a SOT-23 surface-mount device with 1.25W maximum dissipation, thermal performance depends on PCB copper area and thermal vias

expanding copper around the pad improves heat spreading.

How does its switching suitability relate to gate charge?

The modest gate charge of 2.5nC minimises drive energy and allows faster transitions with lower gate-driver demand, which is beneficial for switching applications with limited drive capability.