Infineon HEXFET Type P-Channel MOSFET, 760 mA, 30 V Enhancement, 3-Pin SOT-23 IRLML5103TRPBF

RS 제품 번호:: 302-038
제조사 부품 번호:: IRLML5103TRPBF
제조업체:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 760 mA, 30 V Enhancement, 3-Pin SOT-23 IRLML5103TRPBF

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Subtotal (1 pack of 5 units)*

₩2,500.40

제한된 재고

20 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 745	₩500.08	₩2,500.40
750 - 1495	₩485.04	₩2,425.20
1500 +	₩477.52	₩2,387.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 302-038
제조사 부품 번호:: IRLML5103TRPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	760mA
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	600mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	540mW
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	3.4nC
	Maximum Operating Temperature	150°C
	Height	1.02mm
	Width	1.4 mm
	Standards/Approvals	No
	Length	3.04mm
	Automotive Standard	No
	Distrelec Product Id	304-36-996

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 760mA
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 600mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 540mW
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 3.4nC
	Maximum Operating Temperature 150°C
	Height 1.02mm
	Width 1.4 mm
	Standards/Approvals No
	Length 3.04mm
	Automotive Standard No
	Distrelec Product Id 304-36-996

Infineon HEXFET Series MOSFET, 760mA Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML5103TRPBF

This MOSFET is a versatile electronic component suited for efficient power switching applications. It is designed for use in automation, electronics, and mechanical industries, offering a compact solution for high-performance tasks. Its enhancement channel mode improves operational efficiency, making it a popular choice in applications that require dependable MOSFET functionality.

Features & Benefits

• Compact SOT-23 package appropriate for space-constrained designs

• High continuous drain current of 760 mA for enhanced durability

• Maximum drain-source voltage of 30 V for a range of applications

• Low Rds(on) of 600mΩ minimises power loss and boosts efficiency

• Typical gate charge of 3.4nC lowers switching losses

Applications

• Utilised in power management and conversion solutions

• Suitable for industrial automation setups

• Ideal for switch-mode power supply designs

• Supports battery management systems in electronic devices

• Employed in motor control that require efficient power switching

How does the MOSFET perform in high-temperature environments?

It functions effectively at temperatures up to +150°C, ensuring consistent performance under challenging conditions.

What is the significance of the low Rds(on) value?

A low Rds(on) of 600mΩ reduces energy loss during operation, enhancing overall system efficiency.

Can this MOSFET be used in compact designs?

Yes, the SOT-23 package enables integration into compact applications without compromising performance.

What is the maximum gate-source voltage this device can handle?

It can tolerate a maximum gate-source voltage of ±20V, ensuring safe operation within specified limits.

How should the installation be approached for optimal performance?

Proper handling and layout on the PCB are crucial to ensure adequate thermal management and connectivity for optimal results.