Infineon HEXFET N-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23 IRLML2060TRPBF

RS 제품 번호:: 725-9357
Distrelec 제품 번호:: 304-45-313
제조사 부품 번호:: IRLML2060TRPBF
제조업체:: Infineon

Infineon HEXFET N-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23 IRLML2060TRPBF

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760개 더 담고 ₩9,120.00 할인 받기

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Subtotal (1 pack of 20 units)*

₩7,360.00

320 개 단위 배송 준비 완료
추가로 2026년 11월 19일 부터 26,140 개 단위 배송

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수량	한팩당	한팩당*	절감
20 - 740	₩368.00	₩7,340.00	-
760 - 1480	₩356.00	₩7,120.00	₩9,120.00
1500 +	₩352.00	₩7,060.00	₩24,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 725-9357
Distrelec 제품 번호:: 304-45-313
제조사 부품 번호:: IRLML2060TRPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.2A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	480mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.25W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	0.67nC
	Maximum Gate Source Voltage Vgs	-16V, +16V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	1.02mm
	Standards/Approvals	No
	Width	1.4mm
	Length	3.04mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.2A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 480mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.25W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 0.67nC
	Maximum Gate Source Voltage Vgs -16V, +16V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 1.02mm
	Standards/Approvals No
	Width 1.4mm
	Length 3.04mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 1.2A Maximum Continuous Drain Current - IRLML2060TRPBF

This MOSFET is a compact N-channel enhancement device intended for low-power switching in surface-mounted circuits. It offers moderate voltage handling and continuous current capacity for use in portable and space-constrained electronic assemblies, operating reliably across an extended temperature range.

Features and Benefits:

• Low Rds(on) of 480mΩ enables reduced conduction losses
• Maximum Vds 60V allows medium-voltage switching applications
• Continuous drain current 1.2A supports modest load currents
• Gate charge Qg 0.67nC enables faster gate-drive transitions
• Power dissipation rating 1.25W limits thermal rise under load
• Gate-source withstand 16V gives margin for drive variation

Applications

• Suitable for DC switch control in battery-powered devices
• Ideal for small motor-driver circuits and load switching
• Used with logic-level drivers for efficient power conversion
• Can be used for signal-level power distribution on PCBs
• Suitable for compact power-management modules in instrumentation

What temperature conditions can it withstand during operation?

It is specified to function down to -55°C and up to 150°C for use in environments with wide thermal variation.

How does the package affect board layout and assembly?

The SOT-23 surface-mount package minimises board footprint and eases automated placement for high-density assemblies.

What electrical stress limits should designers consider for gate drive?

The maximum gate-source voltage is 16V, so gate drivers should remain within this value to avoid over-stressing the gate.

How does its switching behaviour impact thermal management?

With a typical gate charge of 0.67nC and 1.25W power dissipation, duty cycle and switching frequency must be managed to prevent excessive junction heating.