Infineon HEXFET N-Channel MOSFET, 1.2 A, 20 V Enhancement, 3-Pin SOT-23 IRLML2402TRPBF

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RS 제품 번호:
302-016
Distrelec 제품 번호:
304-36-994
제조사 부품 번호:
IRLML2402TRPBF
제조업체:
Infineon
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브랜드

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.2A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

2.6nC

Maximum Gate Source Voltage Vgs

-12V, +12V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

540mW

Maximum Operating Temperature

150°C

Length

3.04mm

Standards/Approvals

No

Width

1.4mm

Height

1.02mm

Automotive Standard

No

N-Channel Power MOSFET 12V to 25V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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