Infineon HEXFET Type N-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 IRLML6344TRPBF

RS 제품 번호:: 737-7225
제조사 부품 번호:: IRLML6344TRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 IRLML6344TRPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩7,031.20

재고있음

3,180 개 단위 배송 준비 완료
추가로 2026년 1월 01일 부터 45,380 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
20 - 740	₩351.56	₩7,031.20
760 - 1480	₩342.16	₩6,862.00
1500 +	₩338.40	₩6,749.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 737-7225
제조사 부품 번호:: IRLML6344TRPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	37mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12 V
	Typical Gate Charge Qg @ Vgs	6.8nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	1.3W
	Maximum Operating Temperature	150°C
	Height	1.02mm
	Width	1.4 mm
	Length	3.04mm
	Standards/Approvals	No
	Automotive Standard	No
	Distrelec Product Id	304-45-318

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 37mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12 V
	Typical Gate Charge Qg @ Vgs 6.8nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 1.3W
	Maximum Operating Temperature 150°C
	Height 1.02mm
	Width 1.4 mm
	Length 3.04mm
	Standards/Approvals No
	Automotive Standard No
	Distrelec Product Id 304-45-318

Infineon HEXFET Series MOSFET, 5A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML6344TRPBF

This MOSFET is a high-performance N-channel surface mount device suitable for various applications in the electronics and automation sectors. Designed with a compact SOT-23 package, it measures 3.04mm in length, 1.4mm in width, and 1.02mm in height. It exhibits excellent thermal performance, with an operating temperature range of -55°C to +150°C.

Features & Benefits

• Offers a continuous drain current of 5A for robust performance

• Maximum drain-source voltage of 30V supports various requirements

• Low RDS(on) of 29mΩ at VGS = 4.5V reduces power losses

• Wide gate threshold voltage range enables flexible operation

• Efficient power dissipation capability of 1.3W enhances reliability

Applications

• Ideal for microcontroller load switching in electronic systems

• Used in power management solutions for automotive

• Effective in DC-DC converters for efficient energy conversion

• Suitable for battery management systems to improve performance

• Effective in motor control circuits for automation tasks

What is the significance of the low RDS(on) value?

The low RDS(on) value indicates lower conduction losses, which translates to better efficiency, especially in high-current applications. This characteristic is essential for reducing heat generation in power electronics.

What voltage range can be applied to the gate-source junction?

The maximum gate-source voltage is ±12V, allowing flexibility in driving conditions while ensuring device integrity within rated limits.

How does the device perform under high temperatures?

With a maximum operating temperature of +150°C, the MOSFET is built to withstand harsh environments, ensuring reliable functionality in demanding applications.

What benefits does the surface mount design provide?

The SOT-23 surface mount design allows for compact circuit layouts and enhances thermal management, making it ideal for modern electronic assemblies.