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Vishay SIHP Type N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-220AB SIHP054N65E-GE3

RS 제품 번호:: 279-9922
제조사 부품 번호:: SIHP054N65E-GE3
제조업체:: Vishay

Vishay SIHP Type N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-220AB SIHP054N65E-GE3

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Subtotal (1 unit)*

₩13,435.50

추가로 2026년 6월 29일 부터 996 개 단위 배송

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RS 제품 번호:: 279-9922
제조사 부품 번호:: SIHP054N65E-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHP
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.058Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	108nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	312W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 650V
	Series SIHP
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.058Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 108nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 312W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHP054N65E-GE3

Vishay SIHP Series MOSFET, 650V Maximum Drain Source Voltage, 47A Maximum Continuous Drain Current - SIHP054N65E-GE3

This MOSFET is a high-voltage N‑channel switching transistor designed for power conversion and control in industrial electronic systems. It operates across a wide temperature range and is supplied in a through‑hole TO‑220AB package for robust mounting and straightforward heat-sinking in assemblies requiring significant power handling.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications • 47A continuous current supports heavy-load operation • 0.058Ω low on‑resistance reduces conduction losses • 312W power dissipation allows substantial heat handling • 108nC typical gate charge permits predictable switching behaviour • 30V gate tolerance ensures compatibility with standard gate drivers

Applications

• Suitable for SMPS primary switching in high-voltage supplies • Ideal for industrial motor drive front‑end stages • Used for power factor correction circuits in mains equipment • Can be used for inverter stages in renewable energy systems

What mounting format is provided for PCB and chassis integration?

The device is supplied in a through‑hole TO‑220AB package with three pins, enabling bolted heatsink attachment and conventional soldered PCB installation.

How does the device perform in high-temperature environments?

It is specified to operate up to 150°C, permitting use in elevated junction temperature designs with appropriate thermal management.

What gate drive considerations should I allow for during switching?

With a typical gate charge of 108nC, gate driver sizing must account for switching energy and transition speed to manage switching losses and EMI.

What are the device’s operating limits for safe gate voltage?

The maximum allowable gate‑to‑source voltage is 30V, so gate drive circuits must remain within this boundary to prevent device stress.