Vishay SIHP Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3

RS 제품 번호:: 279-9923
제조사 부품 번호:: SIHP074N65E-GE3
제조업체:: Vishay

Vishay SIHP Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 tube of 50 units)*

₩482,235.00

추가로 2026년 6월 29일 부터 1,000 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
50 - 50	₩9,644.70	₩482,254.50
100 +	₩8,574.15	₩428,668.50

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 279-9923
제조사 부품 번호:: SIHP074N65E-GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220AB
	Series	SIHP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.078Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	8nC
	Maximum Power Dissipation Pd	250W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220AB
	Series SIHP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.078Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 8nC
	Maximum Power Dissipation Pd 250W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHP074N65E-GE3

Vishay SIHP Series MOSFET, 650V Maximum Drain Source Voltage, 35A Maximum Continuous Drain Current - SIHP074N65E-GE3

This n-channel enhancement MOSFET is designed to switch and control high-voltage, high-current circuits in industrial and electronic systems. Suited to through-hole mounting, it provides a Compact power‑semiconductor solution for discrete power stages where robust voltage handling and thermal endurance are required. The device operates across a wide ambient range and is intended for use in applications demanding elevated operating temperatures and substantial continuous current capability.

Features and Benefits:

• 650V drain voltage enables high-voltage switching applications
• 35A continuous current supports significant power delivery
• 0.078Ω on-resistance minimises conduction losses
• 250W power dissipation facilitates higher load handling
• 8nC typical gate charge allows Faster switching response
• 30V gate tolerance protects gate from common drive levels

Applications

• Suitable for high-voltage motor drive front-ends
• Ideal for switch-mode power supplies in industrial equipment
• Used for inverter stages in power conversion systems
• Can be used for electronic load switches in automation panels
• Suitable for surge suppressors and snubber network implementations

What mounting method does it require for PCB integration?

It is supplied in a through‑hole TO‑220AB package permitting secure mechanical attachment and efficient heatsinking to a chassis or heatsink plate.

How does it perform in elevated-temperature environments?

It is rated for operation up to 150°C which supports thermal margins in densely packed power assemblies.

What is the typical gate drive demand for switching design?

Expect a typical gate charge of 8nC at standard gate‑drive levels, informing gate‑driver current and switching‑energy calculations.

What environmental or regulatory standard applies to its materials?

The device meets RoHS requirements regarding restricted substances in component materials.