Vishay SIHP N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3

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Vishay SIHP N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3
RS 제품 번호
268-8320

개당가격(2개가 1팩안에)

₩15,620.00

RS 제품 번호:
268-8319
제조사 부품 번호:
SIHP150N60E-GE3
제조업체:
Vishay
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모두 선택

브랜드

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220AB

Series

SIHP

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.158Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

36nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

179W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN

Vishay SIHP Series MOSFET, 650V Maximum Drain Source Voltage, 22A Maximum Continuous Drain Current - SIHP150N60E-GE3


This n-channel MOSFET is a high-voltage power transistor designed for switching and amplification tasks in demanding electronic systems. It operates reliably across a wide temperature range and is supplied in a through‑hole TO-220AB package suitable for conventional board mounting. The device complies with RoHS directives and is intended for applications requiring substantial voltage handling and moderate current capability.

Features and Benefits:


• 650V drain rating enables use in high-voltage switching
• 22A continuous drain current supports sustained load flow
• 0.158Ω Rds(on) reduces conduction losses in power paths
• 36nC typical gate charge allows predictable switching profiles
• 179W maximum power dissipation handles significant thermal load

Applications


• Suitable for high-voltage SMPS primary switching
• Ideal for industrial motor inverter stages
• Used with power supplies in telecom rectification
• Can be used for photovoltaic inverter front-ends

What gate voltage limits should be observed during drive design?


The gate must not be driven beyond ±30V relative to source to prevent gate-oxide stress and ensure long-term reliability.

How does thermal management influence practical power handling?


The 179W dissipation rating requires adequate heatsinking and a thermal interface to maintain junction temperature below the 150°C maximum under continuous load.

What ambient temperature range can systems expect around this device?


It is specified to operate from -55°C up to 150°C, permitting use in environments with extreme cold and elevated thermal conditions when correctly mounted.

How does the device’s channel mode affect circuit behaviour?


As an enhancement-mode N-channel device, it remains off at zero gate bias and requires positive gate drive to conduct, simplifying control in low-side and high-side topologies.

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