Vishay SIHP Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3

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₩15,780.00

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2 - 8₩7,890.00₩15,780.00
10 - 28₩7,720.00₩15,440.00
30 - 98₩7,550.00₩15,100.00
100 +₩7,410.00₩14,820.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
279-9927
제조사 부품 번호:
SIHP155N60EF-GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

600V

Series

SIHP

Package Type

TO-220AB

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.157Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

38nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

179W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay SIHP Series MOSFET, 600V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHP155N60EF-GE3


This MOSFET is a through-hole N-channel transistor designed for high-voltage switching and power applications. It operates across an extended temperature range and is supplied in a TO-220AB package suitable for conventional heatsinking and panel mounting. The device is intended for engineers requiring a robust semiconductor for discrete power stages and switching topologies where a combination of voltage capability and thermal endurance is needed.

Features and Benefits:


• 600V drain rating enables high-voltage switching applications
• 21A continuous drain current supports substantial load currents
• 0.157 Ω low Rds(on) reduces conduction losses under load
• 179W power dissipation allows higher thermal loading
• 38 nC typical gate charge for manageable switching energy
• 30V gate tolerance supports wide gate-drive voltages

Applications


• Suitable for mains and high-voltage inverter switches
• Used with power supplies requiring robust thermal margin
• Ideal for industrial motor drive stages
• Can be used for DC-DC converters with high-voltage rails
• Used for general-purpose switching in power electronics

What ambient temperatures can the device withstand in operation?


It is specified to operate between -55 °C and 150 °C, enabling use in harsh thermal environments.

How is the package useful for thermal management?


The TO-220AB format provides a metal tab for direct attachment to heatsinks, improving heat transfer for high dissipation.

What gate-drive constraints should be observed?


The maximum gate-to-source voltage is 30V, so gate drivers should be limited to this value to avoid overstress.

Is the device compliant with common material restrictions?


It meets RoHS requirements, restricting certain hazardous substances in its construction.

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