제조사부품번호

Vishay SIHP Type N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-220AB SIHP054N65E-GE3

RS 제품 번호:: 279-9921
제조사 부품 번호:: SIHP054N65E-GE3
제조업체:: Vishay

Vishay SIHP Type N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-220AB SIHP054N65E-GE3

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Subtotal (1 tube of 50 units)*

₩540,000.00

일시적 품절

950 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
50 - 50	₩10,800.00	₩540,000.00
100 +	₩10,584.00	₩529,200.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 279-9921
제조사 부품 번호:: SIHP054N65E-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220AB
	Series	SIHP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.058Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	312W
	Typical Gate Charge Qg @ Vgs	108nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220AB
	Series SIHP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.058Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 312W
	Typical Gate Charge Qg @ Vgs 108nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHP054N65E-GE3

Vishay SIHP Series MOSFET, 650V Maximum Drain Source Voltage, 47A Maximum Continuous Drain Current - SIHP054N65E-GE3

This MOSFET is a high-voltage N‑channel enhancement transistor designed for power switching in demanding electrical systems. It is supplied in a through‑hole TO‑220AB package and is intended for use where substantial drain current and elevated voltage tolerance are required. The component is RoHS‑compliant and operates across a wide ambient temperature range suitable for industrial environments.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications
• 47A continuous drain current supports heavy‑load operation
• 312W power dissipation allows sustained high‑power handling
• 0.058Ω Rds(on) reduces conduction losses under load
• 108nC typical gate charge permits controlled switching dynamics
• Gate‑source withstand of 30V safeguards drive margin

Applications

• Suitable for industrial motor drive inverter stages
• Ideal for high‑voltage power supplies and converters
• Used for renewable energy inverter switching assemblies
• Can be used for UPS and battery‑backup power electronics
• Suitable for high‑current relay replacement circuits

What temperature extremes can it endure in operation?

It is specified to function from -55°C up to 150°C, allowing use in a broad range of thermal conditions.

How is the device mounted for thermal and mechanical stability?

The component is configured for through‑hole mounting in a TO‑220AB format to facilitate heatsinking and secure PCB attachment.

What is the expected switching behaviour with respect to gate drive?

With a typical gate charge of 108nC and a maximum Vgs of 30V, switching speed and required drive energy can be calculated to match driver capability.

How does on‑resistance influence efficiency in high‑current designs?

The maximum drain‑source resistance of 0.058Ω lowers I²R losses, improving efficiency when operating near the specified 47A continuous current limit.