Vishay SIHP Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3

RS 제품 번호:: 268-8320
제조사 부품 번호:: SIHP150N60E-GE3
제조업체:: Vishay

Vishay SIHP Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 2 units)*

₩15,620.00

1,000 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 8	₩7,810.00	₩15,620.00
10 - 18	₩7,070.00	₩14,140.00
20 - 98	₩6,910.00	₩13,820.00
100 - 498	₩5,780.00	₩11,560.00
500 +	₩4,900.00	₩9,800.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 268-8320
제조사 부품 번호:: SIHP150N60E-GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	22A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHP
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.158Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Power Dissipation Pd	179W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 22A
	Maximum Drain Source Voltage Vds 650V
	Series SIHP
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.158Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Power Dissipation Pd 179W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHP150N60E-GE3

COO (Country of Origin):: CN

Vishay SIHP Series MOSFET, 650V Maximum Drain Source Voltage, 22A Maximum Continuous Drain Current - SIHP150N60E-GE3

This n-channel MOSFET is a high-voltage power transistor designed for switching and amplification tasks in demanding electronic systems. It operates reliably across a wide temperature range and is supplied in a through‑hole TO-220AB package suitable for conventional board mounting. The device complies with RoHS directives and is intended for applications requiring substantial voltage handling and moderate current capability.

Features and Benefits:

• 650V drain rating enables use in high-voltage switching
• 22A continuous drain current supports sustained load flow
• 0.158Ω Rds(on) reduces conduction losses in power paths
• 36nC typical gate charge allows predictable switching profiles
• 179W maximum power dissipation handles significant thermal load

Applications

• Suitable for high-voltage SMPS primary switching
• Ideal for industrial motor inverter stages
• Used with power supplies in telecom rectification
• Can be used for photovoltaic inverter front-ends

What gate voltage limits should be observed during drive design?

The gate must not be driven beyond ±30V relative to source to prevent gate-oxide stress and ensure long-term reliability.

How does thermal management influence practical power handling?

The 179W dissipation rating requires adequate heatsinking and a thermal interface to maintain junction temperature below the 150°C maximum under continuous load.

What ambient temperature range can systems expect around this device?

It is specified to operate from -55°C up to 150°C, permitting use in environments with extreme cold and elevated thermal conditions when correctly mounted.

How does the device’s channel mode affect circuit behaviour?

As an enhancement-mode N-channel device, it remains off at zero gate bias and requires positive gate drive to conduct, simplifying control in low-side and high-side topologies.