Vishay EF Type N-Channel Power MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220AB SiHP105N60EF-GE3

RS 제품 번호:: 200-6795
제조사 부품 번호:: SiHP105N60EF-GE3
제조업체:: Vishay

Vishay EF Type N-Channel Power MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220AB SiHP105N60EF-GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 5 units)*

₩51,380.00

90 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 10	₩10,276.00	₩51,380.00
15 - 20	₩10,024.00	₩50,120.00
25 +	₩9,872.00	₩49,360.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 200-6795
제조사 부품 번호:: SiHP105N60EF-GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	650V
	Series	EF
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	88mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	208W
	Typical Gate Charge Qg @ Vgs	53nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	14.4mm
	Width	4.65mm
	Length	10.52mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 650V
	Series EF
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 88mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 208W
	Typical Gate Charge Qg @ Vgs 53nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 14.4mm
	Width 4.65mm
	Length 10.52mm
	Standards/Approvals RoHS
	Automotive Standard No

Document- SiHP105N60EF-GE3

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 29A Continuous Drain Current - SiHP105N60EF-GE3

This power MOSFET is a high-voltage switching device designed for demanding power-conversion and control roles in industrial and electronic systems. It is an N-channel enhancement-mode transistor supplied in a through-hole TO-220AB package, intended to handle elevated voltages and sustained currents while operating across a wide temperature span.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications
• 29A continuous drain capability supports substantial load currents
• 208W maximum dissipation allows high-power handling
• 88mΩ Rds(on) minimises conduction losses at rated conditions
• 53nC typical gate charge optimises switching energy and drive requirements
• 30V gate tolerance permits robust gate-drive margins

Applications

• Suitable for SMPS primary-side switching stages
• Ideal for industrial motor-drive inverter sections
• Used for high-voltage DC-DC converters in power supplies
• Can be used for electronic load and power-test equipment
• Used with discrete switch topologies in power factor correction

What thermal extremes can it withstand in operation?

The device is specified to operate from -55°C up to 150°C, permitting use in both cold-start environments and elevated-temperature installations.

How is it mounted and integrated into a PCB design?

It uses a through-hole TO-220AB package with three pins and a mounting tab for heatsinking, allowing straightforward board fixation and thermal management via a heatsink attached to the tab.

What gate-drive considerations should be observed?

The maximum gate-to-source rating is 30V

gate-drive voltages should be kept within this limit and matched to the 53nC typical gate charge to ensure efficient switching without overstressing the gate.

What forward voltage characteristic is relevant during conduction?

The forward voltage is 1.2V, which informs conduction-loss calculations in low-voltage current paths and body-diode performance assessments.