Vishay E Type N-Channel Power MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB

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Subtotal (1 tube of 50 units)*

₩275,437.50

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한팩당
Per Tube*
50 - 50₩5,508.75₩275,476.50
100 - 450₩5,409.30₩270,504.00
500 - 950₩5,313.75₩265,648.50
1000 - 1950₩5,218.20₩260,890.50
2000 +₩5,124.60₩256,191.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
228-2874
제조사 부품 번호:
SiHP080N60E-GE3
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220AB

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

42nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

227W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 35A Maximum Continuous Drain Current - SiHP080N60E-GE3


This power MOSFET is a high-voltage N-channel switching device designed for power conversion and control in industrial and electronic systems. It operates as an enhancement-mode transistor in a through-hole TO-220 package, allowing robust mounting and heat-sinking for demanding applications. The device is suited to circuits requiring high drain-source voltage handling and significant continuous current capability.

Features and Benefits:


• 650V rating enables handling of high-voltage power rails • 35A continuous drain current supports substantial load currents • 80mΩ Rds(on) minimises conduction losses during switching • 42nC typical gate charge reduces driver energy requirements • 227W power dissipation permits sustained thermal loading • 150°C maximum junction temperature allows high-temperature operation

Applications


• Suitable for high-voltage DC-DC converters in industrial power supplies • Ideal for motor-drive front-ends requiring robust switching elements • Used for inverter stages in medium-power renewable systems • Can be used for power-factor-correction stages in commercial equipment • Used with discrete switching designs needing through-hole mounting

What gate-drive considerations should I allow for?


Expect a typical gate charge of 42nC at the specified gate drive, so select a driver capable of sourcing and sinking the required Peak current to meet switching-speed targets.

How should thermal management be applied in a design?


Use a suitable heatsink attached to the TO-220 tab and account for the 227W power dissipation rating under defined thermal conditions to maintain junction temperature below its 150°C limit.

What polarity and mounting constraints exist for PCB integration?


The device is an N-channel enhancement device with three pins in a through-hole TO-220 arrangement, enabling secure mechanical attachment and straightforward thermal coupling to a chassis or heatsink.

Are there limits for gate voltage during operation?


The maximum permissible gate-source voltage is 30V, so gate-drive circuits must be designed to remain within this threshold to avoid device stress.

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