Vishay SIHB Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3

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Subtotal (1 pack of 5 units)*

₩15,923.60

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한팩당*
5 - 5₩3,184.72₩15,923.60
10 - 20₩2,868.88₩14,344.40
25 - 95₩2,812.48₩14,062.40
100 - 495₩2,308.64₩11,543.20
500 +₩1,895.04₩9,475.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
268-8295
제조사 부품 번호:
SIHB6N80AE-GE3
제조업체:
Vishay
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브랜드

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

850V

Series

SIHB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.95Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.67mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay E series power MOSFET has low switching and conduction losses, it is used in applications such as switch mode power supplies, server power supplies, and power factor correction power supplies. It has integrated zener diode for ESD protection.

Low effective capacitance

Avalanche energy rated

Low figure of merit

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