Vishay SIHB21N80AE N channel-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T1-GE3

N
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₩6,977.10

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1 - 9₩6,977.10
10 - 49₩4,317.30
50 - 99₩3,357.90
100 +₩2,267.85

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RS 제품 번호:
735-128
제조사 부품 번호:
SIHB21N80AE-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

17.4A

Maximum Drain Source Voltage Vds

800V

Series

SIHB21N80AE

Package Type

TO-263

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

0.205Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

179W

Typical Gate Charge Qg @ Vgs

48nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Length

0.42mm

Standards/Approvals

RoHS

Width

0.355mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay Power MOSFET designed for efficient operation in power supplies and other applications, aimed at reducing energy losses and enhancing reliability.

Compact D2PAK package for space-saving designs

Reduced switching and conduction losses for improved performance

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