Vishay SIHB21N80AE N channel-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T1-GE3
- RS 제품 번호:
- 735-128
- 제조사 부품 번호:
- SIHB21N80AE-T1-GE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
₩6,977.10
일시적 품절
- 2026년 10월 14일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩6,977.10 |
| 10 - 49 | ₩4,317.30 |
| 50 - 99 | ₩3,357.90 |
| 100 + | ₩2,267.85 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 735-128
- 제조사 부품 번호:
- SIHB21N80AE-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 17.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | SIHB21N80AE | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.205Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 0.42mm | |
| Width | 0.355mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 17.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series SIHB21N80AE | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.205Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 0.42mm | ||
Width 0.355mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Power MOSFET designed for efficient operation in power supplies and other applications, aimed at reducing energy losses and enhancing reliability.
Compact D2PAK package for space-saving designs
Reduced switching and conduction losses for improved performance
관련된 링크들
- Vishay SIHB21N80AE N channel-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T5-GE3
- Vishay E Type N-Channel MOSFET, 21 A, 800 V Enhancement, 3-Pin TO-263 SIHB24N80AE-GE3
- Vishay E Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-GE3
- Vishay SIHB Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3
- Vishay E Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3
- Vishay E Type N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-263 SIHB5N80AE-GE3
- Vishay E Type N-Channel MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
- Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-263 SIHB11N80AE-GE3