Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3

RS 제품 번호:: 210-4972
제조사 부품 번호:: SIHB17N80AE-GE3
제조업체:: Vishay

Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 5 units)*

₩22,678.50

추가로 2026년 6월 29일 부터 735 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 10	₩4,535.70	₩22,678.50
15 - 20	₩4,422.60	₩22,113.00
25 +	₩4,352.40	₩21,762.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 210-4972
제조사 부품 번호:: SIHB17N80AE-GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-263
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	41nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	179W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	9.65mm
	Standards/Approvals	RoHS
	Height	4.06mm
	Length	14.61mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-263
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 41nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 179W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 9.65mm
	Standards/Approvals RoHS
	Height 4.06mm
	Length 14.61mm
	Automotive Standard No

Datasheet - SIHB17N80AE-GE3

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 15A Continuous Drain Current - SIHB17N80AE-GE3

This power MOSFET is a high-voltage N-channel device designed for switching and power-conversion roles in industrial and electronic systems. It operates as an enhancement-mode transistor and is supplied in a TO-263 surface-mount package for use on populated circuit boards. The component is intended for applications requiring high drain-source voltage handling and Compact thermal management.

Features and Benefits:

• 800V drain-source rating enables high-voltage switching
• 15A continuous drain current supports substantial load currents
• 250 mΩ Rds(on) reduces conduction losses under load
• 179W power dissipation capacity aids thermal stability
• 41 nC typical gate charge ensures Faster switching transitions
• Vgs limit of 30V protects gate from overvoltage

Applications

• Suitable for high-voltage SMPS primary-side switching
• Ideal for industrial motor drive-stage switching
• Used for power-factor-correction front-end converters
• Can be used for inverter and UPS high-voltage sections

What temperature range can it operate within?

It functions across ambient extremes from -55 °C to a maximum operating temperature of 150 °C, suitable for elevated-temperature environments.

How many electrical connections does it present to the PCB?

The device provides three electrical pins consistent with common MOSFET topology for drain, gate and source connections.

What packaging considerations affect heat dissipation?

The TO-263 surface-mount package offers a low-profile thermal path to the PCB and is intended for attachment to a suitably sized copper land for heat spreading.

Is it suitable for automotive-qualified designs?

It is not specified as automotive-standard compliant and should be evaluated accordingly for vehicle applications.