Vishay SIHB21N80AE N channel-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T5-GE3

N
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₩6,977.10

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1 - 9₩6,977.10
10 - 49₩4,317.30
50 - 99₩3,357.90
100 +₩2,267.85

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RS 제품 번호:
735-129
제조사 부품 번호:
SIHB21N80AE-T5-GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

17.4A

Maximum Drain Source Voltage Vds

800V

Series

SIHB21N80AE

Package Type

TO-263

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

0.205Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

48nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

179W

Maximum Operating Temperature

150°C

Width

0.355mm

Standards/Approvals

RoHS

Length

0.42mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay Power MOSFET offers high efficiency and robust performance in power supplies, suitable for demanding applications in server and telecom environments. It is designed to optimise energy management and minimise losses.

Low effective capacitance contributing to Faster response times

Single configuration streamlines design and integration

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