Vishay SIHB21N80AE N channel-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T5-GE3
- RS 제품 번호:
- 735-129
- 제조사 부품 번호:
- SIHB21N80AE-T5-GE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
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₩6,977.10
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- 2026년 10월 14일 부터 배송
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩6,977.10 |
| 10 - 49 | ₩4,317.30 |
| 50 - 99 | ₩3,357.90 |
| 100 + | ₩2,267.85 |
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- RS 제품 번호:
- 735-129
- 제조사 부품 번호:
- SIHB21N80AE-T5-GE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | SIHB21N80AE | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.205Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Power Dissipation Pd | 179W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.355mm | |
| Standards/Approvals | RoHS | |
| Length | 0.42mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series SIHB21N80AE | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.205Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Power Dissipation Pd 179W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 0.355mm | ||
Standards/Approvals RoHS | ||
Length 0.42mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Power MOSFET offers high efficiency and robust performance in power supplies, suitable for demanding applications in server and telecom environments. It is designed to optimise energy management and minimise losses.
Low effective capacitance contributing to Faster response times
Single configuration streamlines design and integration
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