제조사부품번호

Vishay SIHB Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3

RS 제품 번호:: 268-8294
제조사 부품 번호:: SIHB6N80AE-GE3
제조업체:: Vishay

Vishay SIHB Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3

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RS 제품 번호:: 268-8294
제조사 부품 번호:: SIHB6N80AE-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	850V
	Package Type	TO-263
	Series	SIHB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.95Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	62.5W
	Maximum Operating Temperature	150°C
	Length	10.67mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 850V
	Package Type TO-263
	Series SIHB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.95Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 62.5W
	Maximum Operating Temperature 150°C
	Length 10.67mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHB6N80AE-GE3

COO (Country of Origin):: CN

The Vishay E series power MOSFET has low switching and conduction losses, it is used in applications such as switch mode power supplies, server power supplies, and power factor correction power supplies. It has integrated zener diode for ESD protection.

Low effective capacitance

Avalanche energy rated

Low figure of merit

Vishay SIHB Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3

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