제조사부품번호

Vishay E N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-263 SIHB11N80AE-GE3

RS 제품 번호:: 210-4967
제조사 부품 번호:: SIHB11N80AE-GE3
제조업체:: Vishay

Vishay E N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-263 SIHB11N80AE-GE3

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RS 제품 번호:: 210-4967
제조사 부품 번호:: SIHB11N80AE-GE3
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-263
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	391mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	42nC
	Maximum Power Dissipation Pd	78W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	4.06mm
	Length	14.61mm
	Standards/Approvals	No
	Width	9.65mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-263
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 391mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 42nC
	Maximum Power Dissipation Pd 78W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 4.06mm
	Length 14.61mm
	Standards/Approvals No
	Width 9.65mm
	Automotive Standard No

Datasheet - SIHB11N80AE-GE3

The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with single configuration.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

Vishay E N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-263 SIHB11N80AE-GE3

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