Vishay Type N-Channel MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12
- RS 제품 번호:
- 252-0267
- 제조사 부품 번호:
- SIHK185N60E-T1-GE3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 reel of 2000 units)*
₩7,061,280.00
재고있음
- 추가로 2025년 12월 29일 부터 2,000 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2000 - 4000 | ₩3,530.64 | ₩7,063,160.00 |
| 6000 + | ₩3,461.08 | ₩6,921,784.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 252-0267
- 제조사 부품 번호:
- SIHK185N60E-T1-GE3
- 제조업체:
- Vishay
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.05mΩ | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 132W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.05mΩ | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 132W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Kelvin connection for reduced gate noise
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