Vishay EF Type N-Channel Power MOSFET, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60EF-T1GE3

RS 제품 번호:: 252-0263
제조사 부품 번호:: SIHK055N60EF-T1GE3
제조업체:: Vishay

Vishay EF Type N-Channel Power MOSFET, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60EF-T1GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 reel of 2000 units)*

₩15,192,000.00

2,000 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
2000 - 4000	₩7,596.00	₩15,190,400.00
6000 +	₩7,444.00	₩14,886,400.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 252-0263
제조사 부품 번호:: SIHK055N60EF-T1GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	EF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.05mΩ
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	90nC
	Maximum Power Dissipation Pd	236W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	5.15mm
	Standards/Approvals	RoHS
	Length	6.15mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series EF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.05mΩ
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 90nC
	Maximum Power Dissipation Pd 236W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 5.15mm
	Standards/Approvals RoHS
	Length 6.15mm
	Automotive Standard AEC-Q101

Datasheet - SIHK055N60EF-T1GE3

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 40A Drain Current - SIHK055N60EF-T1GE3

This power MOSFET is a high-voltage switching transistor intended for demanding power conversion and control environments. It is a surface-mount N-channel depletion device that operates across a broad thermal range and is suited to applications requiring high-voltage handling, substantial continuous current and controlled gate-drive behaviour.

Features and Benefits:

• 650V drain-source rating enables high-voltage switching capability
• 40A continuous drain current supports heavy-load operation
• 0.05mΩ Rds(on) minimises conduction losses at high currents
• 90nC typical gate charge allows predictable switching energy
• 236W maximum power dissipation handles significant thermal stress
• 20V gate tolerance permits robust gate-drive margins

Applications

• Used with industrial power converters and inverters
• Suitable for high-voltage motor drive stages
• Ideal for DC-DC conversion in heavy-duty systems
• Can be used for traction or automotive power modules
• Used for high-power switch arrays in energy systems

What thermal extremes can the device endure in service?

It is rated to operate from -55°C up to +150°C, permitting use in environments with wide temperature variation.

How is the component mounted on a board and what package is provided?

The device is supplied in a PowerPAK 10x12 surface-mount package designed for low-inductance PCB mounting and efficient thermal contact.

What regulatory or industry readiness does it offer for automotive use?

It meets AEC-Q101 requirements for semiconductor qualification suitable for automotive electronic systems.

What pin-count should designers expect when creating PCB footprints?

The component presents an 8-pin layout, which should be accommodated in the PCB land pattern for correct placement and routing.