Vishay E Type N-Channel Power MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3

RS 제품 번호:: 239-8638
제조사 부품 번호:: SIHK125N60E-T1-GE3
제조업체:: Vishay

Vishay E Type N-Channel Power MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3

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Subtotal (1 pack of 2 units)*

₩20,120.00

2,050 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 48	₩10,060.00	₩20,120.00
50 - 98	₩9,880.00	₩19,760.00
100 - 248	₩9,700.00	₩19,400.00
250 - 998	₩9,530.00	₩19,060.00
1000 +	₩9,340.00	₩18,680.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 239-8638
제조사 부품 번호:: SIHK125N60E-T1-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.109Ω
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	54nC
	Maximum Power Dissipation Pd	132W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.109Ω
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 54nC
	Maximum Power Dissipation Pd 132W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHK125N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 21A Continuous Drain Current - SIHK125N60E-T1-GE3

This power MOSFET is a high-voltage N-channel switch designed for demanding power-conversion and automotive environments. It operates across an extended ambient range and is supplied in a compact surface-mount PowerPAK 10x12 package suited to dense board layouts. The device supports robust gate drive conditions and is manufactured to meet industry lead-free environmental requirements.

Features and Benefits:

• 650V drain capability enabling high-voltage system designs
• 21A continuous drain current supporting substantial load currents
• Low Rds(on) 0.109Ω reducing conduction losses in power stages
• 132W power dissipation allowing higher thermal headroom
• Gate tolerance up to 30V permitting aggressive drive schemes
• Typical gate charge 54nC for fast switching transitions

Applications

• Suitable for high-voltage DC-DC converters in industrial systems
• Ideal for on-board automotive power distribution modules
• Used with motor-drive stages requiring high-voltage switching
• Can be used for power supplies in telecommunications equipment
• Suitable for half-bridge and synchronous-rectifier implementations

What thermal conditions can it withstand in harsh environments?

It is specified to operate between -55°C and +150°C, enabling use across extreme temperature ranges found in automotive and industrial settings.

How does the package influence mounting and assembly?

The PowerPAK 10x12 surface-mount format offers a low-profile footprint that facilitates automated placement and efficient PCB real-estate usage.

Is this device suitable for automotive qualification workflows?

It complies with the AEC-Q101 automotive standard, making it appropriate for vehicle electronics that require component-level automotive qualification.

What conduction and switching trade-offs should designers expect?

Expect a balance between moderate gate charge and low Rds(on), providing reduced conduction loss while maintaining reasonably fast switching for many power-electronics topologies.