Vishay E Type N-Channel Power MOSFET, 42 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3

RS 제품 번호:: 239-8636
제조사 부품 번호:: SIHK055N60E-T1-GE3
제조업체:: Vishay

Vishay E Type N-Channel Power MOSFET, 42 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3

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₩15,640.00

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1 - 49	₩15,640.00
50 - 99	₩15,360.00
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RS 제품 번호:: 239-8636
제조사 부품 번호:: SIHK055N60E-T1-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	42A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.056Ω
	Channel Mode	Depletion
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	54nC
	Maximum Power Dissipation Pd	236W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 42A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.056Ω
	Channel Mode Depletion
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 54nC
	Maximum Power Dissipation Pd 236W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHK055N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 42A Continuous Drain Current - SIHK055N60E-T1-GE3

This power MOSFET is a high-voltage switching transistor designed for demanding power-conversion and automotive control environments. It operates across an extended ambient range and is offered in a compact surface-mount package suited to high-density assemblies, providing a balance of power handling and thermal capacity for industrial and vehicle electronic systems.

Features and Benefits:

• 650V rating enables high-voltage switching applications
• 42A continuous current supports heavy-load operation
• 0.056Ω Rds(on) reduces conduction losses
• 236W power dissipation allows sustained power throughput
• 54nC typical gate charge minimises switching energy
• 30V gate tolerance ensures robust drive margin

Applications

• Suitable for traction inverter stage power switches
• Ideal for high-voltage DC-DC converter outputs
• Used with motor-drive controllers in automotive systems
• Can be used for industrial power-supply switching
• Appropriate for surface-mounted high-power assemblies

What thermal range can I expect when deploying this device?

It is specified to function from -55°C up to +150°C, enabling operation in extreme ambient and under-bonnet conditions.

How does the package influence mounting and cooling?

The PowerPAK 10x12 surface-mount format provides a low-profile footprint that facilitates PCB thermal conduction and dense board layouts.

Is this device suitable for automotive projects with qualification needs?

It meets AEC-Q101 requirements, making it applicable to many vehicle electronics designs that require automotive-grade components.

What gate-drive constraints should be observed?

The maximum gate-to-source voltage is 30V, so gate-drive circuitry must limit excursions within that range to prevent stress.