Vishay E Type N-Channel Power MOSFET, 48 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3

RS 제품 번호:: 239-8634
제조사 부품 번호:: SIHK045N60E-T1-GE3
제조업체:: Vishay

Vishay E Type N-Channel Power MOSFET, 48 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3

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₩15,400.00

2,040 개 단위 배송 준비 완료

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1 - 49	₩15,400.00
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RS 제품 번호:: 239-8634
제조사 부품 번호:: SIHK045N60E-T1-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	48A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.043Ω
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	278W
	Typical Gate Charge Qg @ Vgs	98nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 48A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.043Ω
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 278W
	Typical Gate Charge Qg @ Vgs 98nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHK045N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 48A Maximum Continuous Drain Current - SIHK045N60E-T1-GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in demanding electronic systems. It offers elevated voltage capability and substantial current handling for use in surface-mounted designs where thermal and electrical performance are critical. The device complies with industry lead-free standards and meets automotive qualification for use in vehicle electronics.

Features and Benefits:

• 650V rating for high-voltage switching applications
• 48A continuous drain current for heavy load handling
• 0.043Ω low on-resistance to reduce conduction losses
• 278W power dissipation for improved thermal endurance
• 98nC typical gate charge for predictable switching behaviour
• 30V gate tolerance enabling robust drive margin

Applications

• Suitable for offline power supplies requiring high blocking voltage
• Ideal for automotive power management and motor drive circuits
• Used with DC-DC converters in industrial equipment
• Can be used for inverter stages in renewable-energy systems
• Suitable for compact surface-mount power modules

What thermal extremes can the device tolerate in operation?

It operates across a wide temperature span from -55°C up to +150°C, suitable for harsh ambient conditions.

How is the device packaged for PCB assembly?

It is supplied in a low-profile PowerPAK10x12 surface-mount package optimised for heat dissipation and automated placement.

What gate drive limitations should designers observe?

The gate must be driven within ±30V to avoid gate-source overstress during switching events.

Does the device suit automotive qualification requirements?

It meets AEC‑Q101 automotive standards, making it appropriate for vehicle electronic subsystems.