Vishay EF N-Channel Power MOSFET, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3
- RS 제품 번호:
- 252-0266
- 제조사 부품 번호:
- SIHK075N60EF-T1GE3
- 제조업체:
- Vishay
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View bulk pricing optionsSubtotal (1 unit)*
₩12,420.00
재고있음
- 추가로 2026년 11월 02일 부터 50 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 - 49 | ₩12,420.00 |
| 50 - 99 | ₩9,700.00 |
| 100 - 249 | ₩9,240.00 |
| 250 - 999 | ₩9,060.00 |
| 1000 + | ₩8,340.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 252-0266
- 제조사 부품 번호:
- SIHK075N60EF-T1GE3
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.061Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Power Dissipation Pd | 192W | |
| Maximum Operating Temperature | +150°C | |
| Width | 5.15mm | |
| Length | 6.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.061Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Power Dissipation Pd 192W | ||
Maximum Operating Temperature +150°C | ||
Width 5.15mm | ||
Length 6.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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