Infineon BSS Type N-Channel MOSFET, 170 mA, 100 V Depletion, 3-Pin SOT-23 BSS169H6327XTSA1

RS 제품 번호:: 250-0551
Distrelec 제품 번호:: 304-40-500
제조사 부품 번호:: BSS169H6327XTSA1
제조업체:: Infineon

Infineon BSS Type N-Channel MOSFET, 170 mA, 100 V Depletion, 3-Pin SOT-23 BSS169H6327XTSA1

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Subtotal (1 pack of 10 units)*

₩6,020.00

추가로 2026년 10월 26일 부터 7,010 개 단위 배송

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수량	한팩당	한팩당*
10 - 10	₩602.00	₩6,020.00
20 - 90	₩540.00	₩5,400.00
100 - 240	₩486.00	₩4,860.00
250 - 490	₩440.00	₩4,400.00
500 +	₩396.00	₩3,960.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 250-0551
Distrelec 제품 번호:: 304-40-500
제조사 부품 번호:: BSS169H6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	170mA
	Maximum Drain Source Voltage Vds	100V
	Series	BSS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	12000mΩ
	Channel Mode	Depletion
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 170mA
	Maximum Drain Source Voltage Vds 100V
	Series BSS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 12000mΩ
	Channel Mode Depletion
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - BSS169H6327XTSA1

Infineon BSS Series MOSFET, 100V Drain-Source Voltage, 0.17A Continuous Drain Current - BSS169H6327XTSA1

This MOSFET is a depletion‑mode N‑channel transistor in a Compact surface‑mount package designed for control and switching in constrained assemblies. It operates across a wide ambient range and is suitable for electrically demanding environments where thermal endurance and low‑voltage gate control are required. The device is RoHS‑compliant and meets an automotive qualification for use in vehicle electronics.

Features and Benefits:

• Depletion channel allows normally‑on operation for fail‑safe circuits
• Wide temperature tolerance enables operation from -55°C to +150°C
• Low continuous current supports precision low‑current control
• High voltage rating protects against transients up to 100V
• SOT‑23 package provides Compact surface‑mount assembly

Applications

• Ideal for analogue biasing and level‑shift networks
• Suitable for small‑signal load switching in control modules
• Used with sensor interfaces requiring normally‑on behaviour
• Can be used for automotive ancillary circuitry conforming to AEC‑Q101
• Suitable for Compact power‑management subcircuits

What is the maximum gate‑to‑source voltage the device can accept?

It tolerates up to 20V between gate and source.

How much power can it dissipate during operation?

The device has a maximum power dissipation of 81W.

What gate charge should designers budget for at Vgs?

Typical total gate charge is 80 nC measured at the specified gate drive.

What is the on‑resistance characteristic relevant for thermal planning?

The maximum drain-source resistance is 12 000mΩ under specified conditions.

Is this device packaged for automated PCB assembly?

Yes, it is supplied in a SOT‑23 surface‑mount package.