Infineon BSS N-Channel MOSFET, 100 mA, 250 V Depletion, 3-Pin SOT-23 BSS139H6327XTSA1
- RS 제품 번호:
- 250-0544
- Distrelec 제품 번호:
- 304-40-498
- 제조사 부품 번호:
- BSS139H6327XTSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 10 units)*
₩7,500.00
재고있음
- 추가로 2026년 10월 26일 부터 1,460 개 단위 배송
- 추가로 2027년 2월 18일 부터 6,000 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩750.00 | ₩7,500.00 |
| 20 - 90 | ₩676.00 | ₩6,760.00 |
| 100 - 240 | ₩608.00 | ₩6,080.00 |
| 250 - 490 | ₩542.00 | ₩5,420.00 |
| 500 + | ₩496.00 | ₩4,960.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 250-0544
- Distrelec 제품 번호:
- 304-40-498
- 제조사 부품 번호:
- BSS139H6327XTSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SOT-23 | |
| Series | BSS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30000mΩ | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SOT-23 | ||
Series BSS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30000mΩ | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSS Series MOSFET, 250V Maximum Drain-Source Voltage, 0.1A Maximum Continuous Drain Current - BSS139H6327XTSA1
This MOSFET is a depletion-mode N‑channel transistor designed for surface-mount applications where controlled low-current switching at high voltage is required. It operates across a broad ambient range and suits Compact SOT-23 footprints in systems that demand automotive qualification and RoHS‑compliant components.
Features and Benefits:
• 250V Maximum drain-source voltage enables high-voltage switching
• 30 000mΩ Maximum drain-source resistance reduces on-state voltage drop
• 81W Maximum power dissipation supports short-duration thermal loads
• 80 nC Typical gate charge offers predictable gate-drive requirements
• ±20V Maximum gate-source voltage permits robust gate‑drive headroom
• 30 000mΩ Maximum drain-source resistance reduces on-state voltage drop
• 81W Maximum power dissipation supports short-duration thermal loads
• 80 nC Typical gate charge offers predictable gate-drive requirements
• ±20V Maximum gate-source voltage permits robust gate‑drive headroom
Applications
• Suitable for high-voltage analogue biasing circuits
• Ideal for low-current control in sensor interfaces
• Used in automotive electronics requiring AEC‑Q101 compliance
• Can be used for Compact SOT-23 surface-mount designs
• Suitable for temperature-stable systems across wide ranges
• Ideal for low-current control in sensor interfaces
• Used in automotive electronics requiring AEC‑Q101 compliance
• Can be used for Compact SOT-23 surface-mount designs
• Suitable for temperature-stable systems across wide ranges
What temperature range can it operate within?
It functions from -55°C up to +150°C.
How many terminals does the package provide?
The device is supplied in a three‑pin SOT-23 package.
What is the typical channel conduction mode and type?
It uses a depletion channel in an N‑type configuration.
Which standards or approvals does it meet?
It complies with RoHS and meets automotive AEC‑Q101 criteria.
What is the typical gate charge at rated gate drive?
The gate charge is typically 80 nC at the specified gate conditions.
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