Infineon SIPMOS Type P-Channel MOSFET, 170 mA, 60 V Enhancement, 3-Pin SOT-23 BSS84PH6327XTSA2

RS 제품 번호:: 892-2217
제조사 부품 번호:: BSS84PH6327XTSA2
제조업체:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 170 mA, 60 V Enhancement, 3-Pin SOT-23 BSS84PH6327XTSA2

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Subtotal (1 pack of 250 units)*

₩41,500.00

추가로 2026년 8월 24일 부터 1,000 개 단위 배송
추가로 2026년 8월 31일 부터 1,750 개 단위 배송
추가로 2026년 12월 31일 부터 18,000 개 단위 배송

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수량	한팩당	한팩당*
250 - 500	₩166.00	₩41,400.00
750 - 1250	₩162.00	₩40,350.00
1500 +	₩158.00	₩39,700.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 892-2217
제조사 부품 번호:: BSS84PH6327XTSA2
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	170mA
	Maximum Drain Source Voltage Vds	60V
	Series	SIPMOS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	12Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1nC
	Maximum Power Dissipation Pd	360mW
	Maximum Operating Temperature	150°C
	Length	2.9mm
	Height	0.9mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 170mA
	Maximum Drain Source Voltage Vds 60V
	Series SIPMOS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 12Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1nC
	Maximum Power Dissipation Pd 360mW
	Maximum Operating Temperature 150°C
	Length 2.9mm
	Height 0.9mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 60V Drain Source Voltage, 170mA Continuous Drain Current - BSS84PH6327XTSA2

This MOSFET is a P-channel transistor intended for low-power switching in surface-mounted electronic assemblies. It operates across a wide temperature span suitable for challenging environments and is designed for compact board-level installations where a P-channel device with moderate voltage rating is required.

Features and Benefits:

• 60V drain withstand provides high-voltage switching capability
• 12Ω RDS(on) enables controlled conduction for low-current paths
• 1nC typical gate charge reduces drive energy and switching losses
• 170mA continuous drain current supports sustained low-current loads
• 360mW maximum dissipation permits modest power handling in small packages

Applications

• Suitable for battery protection and reverse-polarity switching
• Ideal for low-current load switching in automotive modules
• Used with logic-level drivers in portable instrumentation
• Can be used for power-rail selection in compact control boards

What gate voltage limits should designers observe?

The gate-source rating is ±20V, so driver circuits must keep Vgs within that range to avoid device damage.

How does thermal performance influence PCB layout?

With 360mW dissipation, designers should provide adequate copper area and thermal vias to spread heat from the SOT-23 footprint.

Is this device suitable for automotive qualification?

The component meets AEC-Q101 standards, indicating it conforms to automotive-grade stress and screening levels.

What switching behaviour can be expected at high ambient temperatures?

The transistor remains operational from -55°C to 150°C, but RDS(on) and current capability should be verified at the upper temperature extreme for reliable operation.