Infineon BSS Type P-Channel MOSFET, 630 mA, -20 V Enhancement, 3-Pin SOT-323 BSS209PWH6327XTSA1

RS 제품 번호:: 250-0554
제조사 부품 번호:: BSS209PWH6327XTSA1
제조업체:: Infineon

Infineon BSS Type P-Channel MOSFET, 630 mA, -20 V Enhancement, 3-Pin SOT-323 BSS209PWH6327XTSA1

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Subtotal (1 pack of 10 units)*

₩3,460.00

추가로 2026년 10월 26일 부터 6,980 개 단위 배송

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수량	한팩당	한팩당*
10 - 10	₩346.00	₩3,460.00
20 - 90	₩312.00	₩3,120.00
100 - 240	₩282.00	₩2,820.00
250 - 490	₩252.00	₩2,520.00
500 +	₩226.00	₩2,260.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 250-0554
제조사 부품 번호:: BSS209PWH6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	630mA
	Maximum Drain Source Voltage Vds	-20V
	Series	BSS
	Package Type	SOT-323
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	550mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 630mA
	Maximum Drain Source Voltage Vds -20V
	Series BSS
	Package Type SOT-323
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 550mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - BSS209PWH6327XTSA1

Infineon BSS Series MOSFET, 20V Maximum Drain-Source Voltage, 0.63A Maximum Continuous Drain Current - BSS209PWH6327XTSA1

This MOSFET is a P-channel enhancement-mode transistor designed for surface-mount applications in demanding electrical environments. It operates across a wide temperature range and is suited to circuits requiring controlled low-side switching and power management within Compact SOT-323 packages. The device offers practical gate-charge characteristics and modest power handling for small-signal and automotive-related circuitry.

Features and Benefits:

• 550mΩ Rds(on) reduces on-state conduction losses
• 80nC gate charge enables predictable switching performance
• 1V forward voltage minimises voltage drop in diode conduction
• 81W power dissipation supports transient thermal loading
• ±20V gate-source tolerance allows flexible drive arrangements

Applications

• Suitable for automotive control Interface circuits
• Ideal for Compact power-rail reverse-polarity protection
• Used with battery-management sensing and switching
• Can be used for portable device power sequencing
• Useful in surface-mount signal-level power switching

What operating temperatures can it withstand?

It functions from -55°C up to +150°C.

How many pins and what mounting style does it use?

It is a 3-pin device designed for surface mounting in SOT-323 packages.

What certifications or approvals are present for industry use?

It is RoHS-compliant and meets AEC-Q101 automotive standard requirements.

What is the maximum permitted drain-source voltage and gate limit?

The drain-source rating is -20V and the maximum gate-source voltage is ±20V.