Infineon BSS Type P-Channel MOSFET, 630 mA, -20 V Enhancement, 3-Pin SOT-323 BSS209PWH6327XTSA1
- RS 제품 번호:
- 250-0554
- 제조사 부품 번호:
- BSS209PWH6327XTSA1
- 제조업체:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 10 units)*
₩3,460.00
재고있음
- 추가로 2026년 10월 05일 부터 7,070 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩346.00 | ₩3,460.00 |
| 20 - 90 | ₩312.00 | ₩3,120.00 |
| 100 - 240 | ₩282.00 | ₩2,820.00 |
| 250 - 490 | ₩252.00 | ₩2,520.00 |
| 500 + | ₩226.00 | ₩2,260.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 250-0554
- 제조사 부품 번호:
- BSS209PWH6327XTSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 630mA | |
| Maximum Drain Source Voltage Vds | -20V | |
| Series | BSS | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 630mA | ||
Maximum Drain Source Voltage Vds -20V | ||
Series BSS | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes P-channel with enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free. This device is OptiMOS-P Small-Signal-Transistor with super logic level of 2.5 V (rated). The operating temperature is 150°C. It is Avalanche and dv /dt rated. It is Pb-free with lead plating, Halogen-free.
VDS is -20 V, RDS(on),max 550 mΩ and Id is -0.63 A
Maximum power dissipation is 500mW
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